Model & package intelligence
Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
ON MDB10S
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ON MDB10S
- Type
- ON
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- MDB10S
- Electronic Component
- 1
- Package
- SMD-4P
- Type
- Electronic Component
- Electronic Component
- Bridge Rectifier
- Electronic Component
- 0.494g
- Electronic Component
- 1
- Electronic Component
- BM0227475724
- Current
- 1A
- Current(Ir)
- 10uA@1kV
- (Vf)
- 1.1V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MDB10S 产品概述
一、概述
MDB10S 是安森美（ON，安森美半导体）提供的一款单相整流桥，封装为 SMD-4P，适合自动贴装与紧凑电路板设计。器件面向高压小功率整流场合，兼顾高逆向耐压与便捷安装，是需要 1A 级整流且要求高耐压的常用选择。
二、主要电气特性
- 正向压降：Vf = 1.1V @ 1A（单只二极管）。桥式整流时输出通路经两只二极管，典型电压降约 2.2V @ 1A。
- 直流反向耐压：Vr = 1000V（1kV），适合高电压交流整流或高压偏置电路。
- 整流电流：IF(AV) = 1A（平均整流电流）。
- 反向电流：Ir = 10μA @ 1kV（在高电压下仍维持较小的漏电流）。
- 非重复峰值浪涌电流：Ifsm = 30A（单次脉冲峰值，非重复）。
- 工作结温：Tj = -55℃ ~ +150℃，耐高温能力良好。
三、封装与热管理
SMD-4P 表面贴装封装便于高速贴片生产与回流焊，体积小但对散热依赖 PCB 设计。注意：在 1A 工作点下，桥路导通损耗约为 2.2W（2 × 1.1V × 1A），需通过增加铜箔面积、热孔或底层散热层来降低结温，避免长期高温影响可靠性。
四、典型应用
- 高压小功率电源整流（开关电源前端、高压偏置电路）
- 仪器仪表与测量设备中的高压直流供电
- 工业控制与传感器接口的高压整流
- 需要高耐压而又要求表面贴装的电子模块
五、设计与使用建议
- 额定耐压虽为 1kV，但建议按应用条件留有余量并考虑瞬态冲击（加装抑制器或 RC 抑制网络）。
- 高压下反向漏流会随温度显著上升，热规划与环境温度控制非常重要。
- 避免连续超出 Ifsm 的冲击浪涌；如需频繁浪涌，应选用更高浪涌能力的器件或并联并做好电流均衡。
- 若需更低的导通压降，可评估低 Vf 的肖特基，但高压（1kV）下可选项有限，需权衡耐压与损耗。
- 布局上把整流桥尽量靠近变压器或输入端，短引线并留足爬电距离以满足高压安全要求。
六、小结
MDB10S 以 1kV 的高耐压、1A 的平均整流能力和较低的反向漏流为主要优势，适合高压、小功率、表贴化设计场景。合理的 PCB 散热设计与对浪涌/温度的防护措施是保证长期可靠性的关键。若对 Vf、浪涌或反向恢复有特殊要求，请在选型时与替代器件或更高规格型号对比验证。
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