WMSIC Electronic Components

ON FQD6N40CTM

ON FQD6N40CTM
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Product image

ModelFQD6N40CTM
PackageTO-252
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

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Technical data

Product details

20 specifications

Core information

Product name
ON FQD6N40CTM
Type
ON
Unit
Electronic Component
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
FQD6N40CTM
Electronic Component
1
Package
TO-252
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.364g
Electronic Component
1
Electronic Component
BM0209685256
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2.5W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
400V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

FQD6N40CTM 产品概述

FQD6N40CTM 是由 ON Semiconductor（安森美）公司制造的一款高性能 N 通道 MOSFET，属于 QFET® 系列。这款场效应管在电子设备中极具用途，广泛应用于开关电源、电机驱动、电源管理及其他需要高开关效率和低导通损耗的电路中。其出色的电气性能和广泛的工作温度范围使其成为设计工程师和系统集成商的理想选择。

主要特性与参数

FQD6N40CTM 的主要参数包括：

  • 源极到漏极最大电压（Vdss）: 400V
  • 连续漏极电流（Id）: 在25°C 时可达4.5A，具备优良的电流承载能力。
  • 导通电阻（Rds(on)）: 在10V 驱动电压下，最大导通电阻为 1Ω，确保了低功率损耗和高效的能量转换。
  • 栅极阈值电压（Vgs(th)）: 最大值为 4V @ 250µA，适合多种驱动电压需求。
  • 栅极电荷（Qg）: 在10V 驱动条件下，最大值为 20nC，表明其快速开关能力。
  • 输入电容（Ciss）: 625pF @ 25V，具备良好的输入阻抗特性。

这款元件的散热能力也非常出色，功率耗散最大值达到了 2.5W（环境温度下），在结温（Tc）为 25°C 时，最大功率可达到 48W，这使得它能够在高负载工作情况下保持稳定性能。

工作条件与应用

FQD6N40CTM 支持的工作温度范围从 -55°C 到 150°C，确保其在极端环境下也能正常工作，适用于严苛的工业应用和高温环境。这种宽广的温度特性为该产品在航空航天、汽车电子和高温工业设备中的应用提供了保障。

封装与安装

该 MOSFET 采用 TO-252-3（D-Pak）封装，适合表面贴装，带来便捷的安装方式和优良的散热特性。D-Pak 封装不仅提高了元件的稳定性，还为电路板的布局提供了更大的灵活性。

应用场景

FQD6N40CTM 适合于多种应用，包括但不限于：

  1. 开关电源: 在 AC-DC 和 DC-DC 转换器中，FQD6N40CTM 可用作高效开关元件，提供高电压转换和电流控制。
  2. 电机驱动: 该 MOSFET 可用于直流电机驱动电路，在不同负载条件下保持高效率。
  3. 电源管理: 可以在各种电源管理方案中应用，包括电池管理系统和功率分配架构中，实现高效的能源控制和分配。
  4. 逆变器: FQD6N40CTM 在逆变应用中表现出色，可用于太阳能逆变器和其他高频逆变应用。

结论

总结而言，FQD6N40CTM 是一款性能卓越的 N 通道 MOSFET，凭借其优良的电气特性、广泛的工作环境适应性以及灵活的封装选择，将为各类应用带来高效、可靠的解决方案。在寻求高压、高性能的开关元件时，FQD6N40CTM 无疑是一个值得考虑的优秀选择。

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