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ON MMBF4393LT1G
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON MMBF4393LT1G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- MMBF4393LT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET(JFET)
- Electronic Component
- 0.03g
- FETType
- N
- Electronic Component
- 1
- Electronic Component
- BM0057194583
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 225mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：MMBF4393LT1G
MMBF4393LT1G是一款由安森美（ON Semiconductor）生产的结型场效应管（JFET），属于N沟道类型，适用于广泛的电子应用。这款JFET以其优异的性能、可靠性和小巧的表面贴装类型（SOT-23-3）而受到设计工程师的青睐，成为高频信号处理和低功耗应用的理想选择。
主要特性与规格：
电压和电流额定值：
- 击穿电压（V(BR)GSS）：30V，此值表明了该组件在特定条件下的耐压能力。
- 漏源电压（Vds）：也为30V，确保在多种工作环境下的稳定性和安全性。
- 漏极电流（Idss）：在Vds为15V时，Idss最大值为5mA，显示出该器件可处理的小信号电流。
截止电压：
- 当Vgs为500mV且Id约为10nA时，显示了该JFET的截止特性，能够有效控制电流的流动，为电路设计提供了灵活性。
频率特性：
- 输入电容（Ciss）：最大值为14pF，这一特性使得该器件非常适合高频率应用，降低了在高频环境下可能出现的信号延迟和失真。
导通电阻：
- RDS(On)：100Ω，相对较低的导通电阻使得该器件在工作时能有效降低能量损耗，提高整体电路的效率。
功率规格：
- 最大功率：225mW，为广泛的应用提供了充足的功率支持，适用于各种功能电路。
工作温度范围：
- 温度范围：-55°C至150°C，满足苛刻环境条件下的稳定性要求，确保用户在极端条件下也能依赖此器件。
封装与实用性：
该元器件采用SOT-23-3（TO-236）封装，具有小型化和轻量化特性，是通过表面贴装技术（SMT）进行安装的，方便于自动化生产和PCB设计，提高了设计的灵活性和组装效率。
由于其卓越的热稳定性和电气性能，MMBF4393LT1G被广泛应用于各种电子设备中，包括但不限于放大器、开关电路、传感器和其他需要获得高输入阻抗与低噪声特性的应用。
应用领域：
- 音频设备：在音频放大器中使用，提升信号质量与清晰度。
- 无线通信：应用于射频放大器和调制解调器，优化信号的传输和接收。
- 测量和测试设备：在高精度仪器中使用，保证信号的可靠处理。
- 自动化控制：用于传感器和执行器电路，以确保低功率控制。
总结：
作为一款性能稳定、功率适中的N通道结型场效应管，MMBF4393LT1G产品在现代电子应用中扮演着重要角色。其设计考虑到用户的多样需求，能够在小型化设计和高温工作环境下依旧保持出色的表现，对于追求高性能及可靠性的电路设计师而言，无疑是一个优良的选择。通过结合其广泛的应用领域和可靠的技术参数，MMBF4393LT1G展现出了出色的市场竞争力，为未来电子产品的性能提升和技术创新提供了强有力的支撑。
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