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ON MMBT5087LT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON MMBT5087LT1G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- MMBT5087LT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0000034945
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- PNP
- Frequency(f T)
- 40MHz
- Power Dissipation(Pd)
- 225mW
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBT5087LT1G 产品概述
引言
MMBT5087LT1G是一款由安森美半导体（ON Semiconductor）生产的高性能PNP型双极结晶体管（BJT），广泛应用于多种电子电路中。凭借其卓越的电气特性和高度的可靠性，该器件适合用于放大器、开关和信号处理等应用。
基本参数
- 晶体管类型: PNP
- 集电极电流（Ic）最大值: 50 mA
- 集射极击穿电压（Vceo）最大值: 50 V
- 饱和压降（Vce(sat)）最大值: 300 mV @ 1 mA, 10 mA
- 集电极截止电流（ICBO）最大值: 50 nA
- 直流电流增益（hFE）最小值: 250 @ 100 µA, 5 V
- 功率最大值: 300 mW
- 频率跃迁: 40 MHz
- 工作温度范围: -55°C 至 150°C（TJ）
封装信息
MMBT5087LT1G采用SOT-23-3（TO-236）表面贴装型封装，这种小型化的设计使其非常适合现代电子产品的紧凑空间要求。
电气特性
- 高增益: 该器件在典型操作条件下，直流电流增益（hFE）可达到250，充分满足了各种应用中的线性放大需求。
- 低饱和压降: 在典型的开关操作中，其饱和压降仅为300 mV，这使得它在低电压应用中的效率更高，从而能够减少能耗。
- 广泛的电流和电压范围: MMBT5087LT1G的集电极电流额定值为50 mA，能够在多种负载条件下稳定工作。而其集射极击穿电压为50 V，则确保其在面对突发高电压情况时的保护能力。
频率响应
该晶体管的频率跃迁为40 MHz，适合用于高速开关和信号处理应用。其良好的频率特性使其能够在更高的频率下稳定工作，对于需要快速响应的电路尤其重要。
热特性
MMBT5087LT1G的工作温度范围很广，从-55°C到150°C，这使得其在极端环境下仍能可靠运行，特别适用于航空航天、汽车及工业控制等领域。
应用领域
- 开关应用: 该晶体管可以在高效开关电源、继电器驱动和电机控制中发挥重要作用。
- 线性放大器: MMBT5087LT1G适用于音频放大器和射频前置放大器，满足多种放大需求。
- 信号处理: 适合用于无线通信系统中的信号处理，以其优秀的频率特性和低噪声表现，确保信号的完整性。
总结
作为一款高性能的PNP型晶体管，MMBT5087LT1G凭借其小巧的SOT-23封装、出色的电气特性以及广泛的工作温度范围，成为多个电子产品中的重要元件。无论是在开关应用、线性放大器还是信号处理中，它都能够为设计工程师提供卓越的性能和稳定性，助力各种电子设备的高效运行。选择MMBT5087LT1G，即是选择了一款性能优异、应用广泛的电子元器件。
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