WMSIC Electronic Components

ON MMUN2111LT1G

ON MMUN2111LT1G
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Product image

ModelMMUN2111LT1G
PackageSOT-23
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
ON MMUN2111LT1G
Type
ON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
MMUN2111LT1G
Electronic Component
1
Package
SOT-23
Electronic Component
1 PNP
Electronic Component
Digital Transistor
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0092080138
Operating Temperature
55℃~+150℃
Resistor
1
Resistor
10kΩ
Transistor Type
PNP
Power Dissipation(Pd)
246mW

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMUN2111LT1G 产品概述

产品概述： MMUN2111LT1G 是一款高性能的 PNP 型数字晶体管，设计用于各种电子应用中，尤其适合高频开关电路和线性放大电路。这款晶体管由知名半导体制造商安森美（ON Semiconductor）出品，采用了广泛认可的 SOT-23-3（TO-236）封装，便于在紧凑设计中使用。

特点：

  • 高电流处理能力： MMUN2111LT1G 最大集电极电流（Ic）可达 100mA，适合多种驱动负载的场合。
  • 低饱和压降： 在多种工作条件下保持较低的 Vce（饱和压降），最大值为 250mV，这确保了电能的高效利用和器件发热的降低。
  • 较强的电压耐受性： 集射极击穿电压（Vceo）高达 50V，使其在多种电源条件下能稳定工作，同时也能有效应对稍微超出额定值的电压干扰。
  • 出色的直流电流增益（hFE）： 该晶体管在 5mA 的基极电流（Ib）和 10V 的集电极-基极电压下，提供至少 35 的电流增益，确保了信号的高效放大。

应用场景：

  1. 开关电路： MMUN2111LT1G 的特性使其适合于快速开关应用，能够在高频率下稳定工作。由于其低饱和电压，能够有效降低开关损耗，适用于各种信号驱动的电流开关应用。

  2. 信号放大： 因为其具备良好的增益特性，这款晶体管能够用于音频放大和其他小信号的增强。它适用于无线电频率 (RF) 放大器和音频放大器，能够清晰有效地放大信号。

  3. 信号调理和处理设备： 在需要集成蓝牙、Wi-Fi 模块等领域，MMUN2111LT1G 可用于信号调理电路，确保信号的完整性与可靠性。

  4. 传感器和检测电路： 无论是光敏元件还是温度传感器等，MMUN2111LT1G 可用作敏感元件的前置放大，以确保在低电平信号下有效的检测和响应。

电气特性：

  • 基极电阻（R1）：10kΩ
  • 发射极电阻（R2）：10kΩ
  • 集电极截止电流：500nA，这意味着在关断状态时具有极低的功耗。

封装与安装： 采用的 SOT-23-3 封装方式（TO-236），其小尺寸使其适合集成到各种电子设备中，特别是在空间受限的设计中。其表面贴装类型的特点也使得大规模生产中便于自动化组装，提高生产效率。

热特性： 该晶体管的功率最大值达到 246mW，在设计电路时必需考虑散热，以保证在长期运行中的可靠性和稳定性。

结论： 总的来说，MMUN2111LT1G 是一款可靠、功能强大的 PNP 晶体管，适合于多种电子应用场景。其卓越的电气特性与紧凑的封装设计，必将使其在现代电子产品中发挥重要作用。无论在传感器、信号放大，还是开关控制的应用中，均能提供高效、稳定的性能，满足设计者对高品质电子元器件的需求。

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