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BSS138LT3G 是一种高性能、低功耗的 N 通道 MOSFET(场效应管),由安森美(ON Semiconductor)制造。该器件专为需要较高开关速度和良好电流控制的应用场景设计,广泛应用于智能手机、平板电脑、便携式设备、以及其他需要节能高效性能的电子产品。其采用 SOT-23-3(TO-236)封装,适合表面贴装技术(SMT),便于大规模生产和集成。
漏源电压 (Vdss): BSS138LT3G 具有最大 50V 的漏源电压,适用于多种电源管理和信号开关应用。高漏源电压确保在各种工作条件下的可靠性。
连续漏极电流 (Id): 器件可以承受最大 200mA 的连续漏极电流(在 25°C 时),确保其在高负荷条件下依旧稳定工作。
导通电阻 (Rds On): 在 Vgs 为 5V 的条件下,BSS138LT3G 的最大导通电阻为 3.5Ω,这在一定程度上降低了功率损耗,提高了效率。
阈值电压 (Vgs(th)): 最大阈值电压为 1.5V@1mA,有利于在低电压信号下实现快速开关,从而提升设计灵活性。
输入电容 (Ciss): 在 25V 下,其输入电容的最大值为 50pF,这使得器件在高频应用中具有良好的性能,能够快速响应输入信号。
功率耗散 (Pd): 在 25°C 的环境下,BSS138LT3G 的最大功率耗散达 225mW,适合在要求较小功率损耗的应用场景中使用。
BSS138LT3G 的工作温度范围广,能够在 -55°C 至 +150°C 的环境中稳定运行。这使得该 MOSFET 在极端环境下的電子应用中表现出色,如汽车电子、航空航天设备和工业控制系统。
该器件采用表面贴装型设计,使其在电路板的空间利用上达到最优化,非常适合现代小型化、高密度布局的趋势。此外,封装选用 SOT-23-3(TO-236)形式,使设备的散热效率和生产效率达到较高水平。
BSS138LT3G 被广泛应用于以下领域:
综上所述,BSS138LT3G 是一款性能卓越的 N 通道 MOSFET,具有适合多种应用的电气特性和良好的工作温度范围。其低功耗、高速度和广泛的适用性使其成为现代电子设计中不可或缺的元件。无论是在便携设备、工业控制还是通信系统中,BSS138LT3G 都是实现高性能和高能效的理想选择。
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Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
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