WMSIC Electronic Components

ON MURA210T3G

ModelMURA210T3G
PackageSMA
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ON MURA210T3G
Type
ON
Unit
Electronic Component
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
MURA210T3G
Electronic Component
1
Package
SMA
Electronic Component
Fast Recovery / High-Efficiency Diode
Electronic Component
0.124g
Electronic Component
1
Electronic Component
BM0265260074
Current
2A
Current(Ir)
2uA
(Vf)
940mV@2A
Electronic Component
65℃~+175℃
Electronic Component
Electronic Component
Electronic Component
5000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MURA210T3G 产品概述

MURA210T3G 是 ON Semiconductor 推出的 100V/2A 表面贴装整流二极管,采用 SMA 封装,面向需要高效率开关整流和稳健耐压能力的电源设计。该器件结合低正向压降、较低反向电流和短反向恢复时间,适合从开关电源到功率整流等多种应用场景。

一、主要电气参数与关键性能

  • 正向压降 (Vf):940 mV @ 2 A(典型测试工况,表现出在中等电流下较低的功耗)
  • 直流反向耐压 (Vr):100 V,适用于 100V 额定电压以内的开关和整流场景
  • 整流电流:2 A(连续正向电流,SMA 封装下的常用额定值)
  • 反向电流 (Ir):2 μA(在规定测试条件下,体现低泄漏特性,有利于提高空载效率)
  • 反向恢复时间 (Trr):30 ns,快速恢复特性使其适合中高速开关电源和脉冲整流应用
  • 非重复峰值浪涌电流 (Ifsm):50 A,能承受短时浪涌(如通电瞬间或整流充电浪涌)
  • 工作结温范围:-65 ℃ 至 +175 ℃,说明器件可在较宽温度范围内可靠工作,适应苛刻环境

二、主要特性与优势

  • 低正向压降:在 2 A 工作点下 Vf ≈ 0.94 V,可减小导通损耗,提高系统效率,尤其对要求低损耗的整流链有明显帮助。
  • 快速恢复:Trr 约 30 ns,有利于减少开关损耗与振铃,对桥式整流、反激/正激/同步整流电路均适用。
  • 低反向泄漏:Ir 小至 μA 级,在高压或空载条件下可降低漏耗,提升节能表现。
  • 高温耐受:结温上限 175 ℃,增强了可靠性裕量,适合温度较高的功率密集型应用。
  • SMA 表面贴装:便于自动化贴装与大批量生产,节省 PCB 面积且便于热管理设计。

三、典型应用场景

  • 开关电源次级整流与自由轮二极管(flyback/forward 输出整流)
  • 串入式或并联整流桥,用于适配器、电源模块等
  • 充电器、LED 驱动电源中的快速整流与保护电路
  • 反向极性保护与续流保护场景(考虑 Vf 与功耗权衡)
  • 受限条件下的工业与消费类电源设计,需兼顾浪涌承受能力与效率

四、热管理与 PCB 设计建议

  • 走线与铜箔面积:尽量在器件两侧与底部提供较大铜面积以降低结到环境的热阻。连续 2 A 工作时,长期发热不可忽视,增大周边铜箔有助于散热。
  • 热过孔与散热层:若 PCB 有内层或底层大铜区域,可通过热过孔将热量传导到内部层或散热平面,提升散热效率。
  • 焊盘与封装注意事项:遵循厂商推荐的 SMA 焊盘尺寸与焊接工艺,避免过度回流温度与时间导致器件应力。
  • 温度系数与降额:在高环境温度下应进行适当电流降额以保证长期可靠性;关注结温不超过器件额定上限。

五、可靠性与使用注意

  • 浪涌能力:Ifsm 为 50 A,可承受短时浪涌,但应避免频繁大浪涌以延长寿命。
  • 开关速度与 EMI:30 ns 的反向恢复在多数中频开关应用中表现良好,但在高速开关或极高 dV/dt 场合仍需留意电磁干扰与缓冲网络设计(如 RC 串联缓冲、阻尼等)。
  • 耐压裕量:在系统中预留适当的电压裕量,以应对瞬态冲击与电压尖峰。
  • 测试条件差异:器件标注的 Vf、Ir 等参数受到温度与测试条件影响,设计时请基于最坏情况(高温、高负载)进行验证。

六、封装与采购提示

  • 封装类型:SMA,适配常见贴片工艺。
  • 交付形态:常见为卷装(Tape & Reel),便于自动化贴片与生产线使用。
  • 选型考虑:在设计前应对比 Vf、Trr、Ir 与系统需求,若需更低正向压降可考虑肖特基器件;若需更高耐压或更低恢复时间则选择相应规格的整流或快恢复器件。

总结:MURA210T3G 在 100 V、2 A 等级中提供了平衡的低正向压降、快速恢复与良好热容忍度,适合多种功率整流与保护应用。设计时关注热管理与开关噪声抑制,可使器件在实际电路中达到最佳性能与可靠性。

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