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ON BSS123
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON BSS123
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- BSS123
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.017g
- Electronic Component
- 1
- Electronic Component
- BM0228746594
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 360mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSS123 产品概述
一、产品简介
BSS123 是 ON Semiconductor（安森美）推出的一款小功率 N 沟道增强型场效应管，封装为 SOT-23，适用于高压、低电流的开关与模拟应用。器件额定漏源电压 Vdss 为 100V，适合需耐高压但电流不大的电路场合。
二、主要参数
- 类型：N 沟道 MOSFET（增强型）
- 漏源电压 Vdss：100V
- 连续漏极电流 Id：170mA
- 导通电阻 RDS(on)：10Ω @ Vgs=4.5V（测试电流 0.17A）
- 耗散功率 Pd：360mW（按封装散热条件）
- 阈值电压 Vgs(th)：1.7V
- 输入电容 Ciss：73pF @25V
- 反向传输电容 Crss：3.4pF @25V
- 工作结温范围：-55℃ 至 +150℃
- 封装：SOT-23，单芯片
三、特性与优势
该器件的主要优势在于高耐压与小体积结合，适合需要 100V 耐压但电流需求较低的场合。较小的输入电容（73pF）有利于高速开关和降低门极驱动能量消耗；Crss 较小有利于减小米勒效应，提升开关稳定性。SOT-23 封装便于表面贴装，适合空间受限的电路板设计。
四、典型应用场景
- 高压侧的小信号开关与负载选择（如小电流继电器驱动、传感器隔离）
- 便携式设备或工业接口中的高压保护与控制电路
- DC-DC 转换器的辅助开关或启动电路（当工作电流较小）
- 模拟开关、电平转换与超高阻抗信号的控制
五、使用与驱动建议
- 门极驱动：建议 Vgs 驱动在 4.5V 附近以达到标称 RDS(on)；若仅用逻辑电平（3.3V），需验证实际导通电阻和功耗。
- 开关损耗：尽管 Ciss 不大，但在高频开关时仍需考虑功耗与电压应力，合理控制开关边沿与使用阻尼。
- 保护措施：在感性负载或有浪涌时，建议并联钳位或二极管以保护器件免受瞬态过压。
六、热与封装注意事项
SOT-23 封装的热阻较高，额定 Pd（360mW）通常在特定散热条件下成立。实际电路中应关注封装到 PCB 的散热路径，增加铜箔面积或散热垫可显著提升功率承载能力，避免长期在高结温下工作以延长可靠性。
七、选型提示与结论
选择 BSS123 时，若应用要求耐压高但电流较小、体积受限且需要低输入电容的 MOSFET，BSS123 是经济且实用的选择。若工作电流或开关频率较高，应考虑 RDS(on) 更低或功率更大的封装替代品。总体而言，BSS123 在高压低功耗小信号开关领域表现均衡，适合广泛的工业与消费电子应用。
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