WMSIC Electronic Components

ON NTR4101PT1G

ON NTR4101PT1G
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Product image

ModelNTR4101PT1G
PackageSOT-23
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

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Technical data

Product details

20 specifications

Core information

Product name
ON NTR4101PT1G
Type
ON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
NTR4101PT1G
Electronic Component
1
Package
SOT-23
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0022653098
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
730mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

NTR4101PT1G 产品概述

NTR4101PT1G 是由安森美半导体（ON Semiconductor）制造的一款高性能 P 沟道 MOSFET（场效应管），广泛应用于各类电子电路中。该器件采用 SOT-23-3 封装，适合表面贴装（SMD）技术，为现代电子设备提供了紧凑的解决方案。

基本参数

  • 制造商: ON Semiconductor
  • 零件状态: 有源（Active）
  • FET 类型: P 通道
  • 封装类型: SOT-23-3（TO-236）
  • 工作温度范围: -55°C 至 150°C（TJ）
  • 安装类型: 表面贴装型
  • 基本产品编号: NTR4101PT1G

电气特性

NTR4101PT1G 的一些关键电气特性如下：

  • 连续漏极电流 (Id): 1.8A @ 25°C，适合多种功率处理应用。
  • 漏源电压 (Vdss): 20V，确保能够承受一定的电压而不发生击穿。
  • 最大功率耗散 (Pd): 420mW @ 25°C，为高效散热设计提供基础。
  • 导通电阻 (Rds On): 最大 85 毫欧 @ 1.6A，4.5V，大大降低了在开关过程中的功耗。
  • 栅极阈值电压 (Vgs(th)): 最大值 1.2V @ 250µA，意味着可以使用较低的栅极驱动电压来开关器件。
  • 栅极电压 (Vgs max): ±8V，设计有足够的裕量以处理栅极驱动电路中的电压波动。
  • 输入电容 (Ciss): 最大 675pF @ 10V，低输入电容有助于提高开关速度。

适用场景

NTR4101PT1G 的设计使其适合多种应用场景，包括：

  1. 开关电源: 特别适用于降压或升压转换器，能够高效地处理电源的开关过程。
  2. 低功耗便携设备: 由于其低Rds On 和较小的功率耗散，适合用于电池供电的设备，延长电池使用寿命。
  3. 电机驱动: 可作为电子开关控制小型电机的驱动元件，优化电机运转效率。
  4. 自动化设备: 用于自动控制系统，实现快速响应和高效能。

优势和特点

  • 高效率: NTR4101PT1G 的低导通电阻和低功耗特性使其在高频开关应用中表现优异，能够有效降低热损失。
  • 宽工作温度范围: -55°C 至 150°C 的广泛工作温度意味着其可以在极端环境中稳定运行，提高了产品的适应性。
  • 小型化设计: SOT-23-3 封装尺寸小，促进了产品的轻便化和集成化设计，适合现代电子产品对空间的严格要求。
  • 优良的电气特性: 较高的连续漏极电流和合理的栅极驱动电压，使其易于操作并实现迅速切换。

总结

NTR4101PT1G 是一款功能强大的 P 沟道 MOSFET，凭借其卓越的电气性能与高度的可靠性，成为电子设计中的一种理想选择。无论是在移动设备、工业自动化或电源管理等领域，该器件都能提供优质的解决方案。选择 NTR4101PT1G，可以帮助设计师在性能与功耗效率之间找到最佳平衡点，推动更高效、更智能的电子产品的开发与应用。

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