WMSIC Electronic Components

ON BC556BTF

ModelBC556BTF
PackageTO-92-3
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ON BC556BTF
Type
ON
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
BC556BTF
Electronic Component
1
Package
TO-92-3
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.37g
Electronic Component
1
Electronic Component
BM0257677112
Operating Temperature
65℃~+150℃
Transistor Type
PNP
Frequency(f T)
150MHz
Power Dissipation(Pd)
500mW
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC556BTF 产品概述

BC556BTF 是 ON Semiconductor(安森美)出品的一款高增益、低噪声 PNP 小信号晶体管,适用于通用放大与小功率开关场合。该器件以良好的直流放大率、较高的特征频率与低漏电流为特点,常用在音频前置放大、差分放大电路和高阻抗偏置网络中。

一、主要参数与型号识别

  • 型号:BC556BTF
  • 制造商:ON Semiconductor(安森美)
  • 晶体管类型:PNP 小信号晶体管
  • 最大集电极电流(Ic):100 mA
  • 集-射极击穿电压(Vceo):65 V
  • 耗散功率(Pd):500 mW(TO-92 封装条件下)
  • 直流电流增益(hFE):110 @ Ic=2 mA, VCE=5 V(典型条件)
  • 特征频率(fT):150 MHz(典型)
  • 集电极截止电流(Icbo):15 nA(典型,常温)
  • 集-射极饱和电压(VCE(sat)):约 300 mV(参考数据表)
  • 射-基极击穿电压(Vebo):5 V
  • 工作温度范围:-65 ℃ ~ +150 ℃
  • 封装:TO-92-3(通孔,便于原型与手工焊接)

二、主要特性

  • 高直流增益:在低电流工作点(2 mA)下 hFE 可达 110,便于实现高增益的小信号放大器设计。
  • 低漏电流:Icbo 仅 15 nA,使其在高阻抗偏置与长时间稳定性要求的电路中表现良好。
  • 宽频率响应:fT ≈ 150 MHz,适用于 VHF 及音频带宽要求较高的放大器。
  • 良好的饱和特性:VCE(sat) 约 300 mV,有助于在开关场合降低压降与功耗。
  • 宽温度范围与稳健性:可在-65 ℃ 至 +150 ℃范围内工作,适合工业级与较严苛环境应用。

三、典型应用

  • 音频前置放大器与低噪声放大器(PNP 支路)
  • 差分放大器、输入级与电流镜(高 hFE 与低漏电使得偏置稳定)
  • 低功率开关、电子开关与驱动小继电器或小信号负载(注意功耗限制)
  • 互补对(与 BC546 系列等 NPN 器件)构成推挽输出或放大级
  • 仪器仪表中的高阻抗输入电路、偏置网络与电流探测放大级

四、使用建议与电路注意事项

  • 验证工作点:为获得标称 hFE,通常在小电流(如 1–5 mA)工作点下测试;在设计时应考虑 hFE 随电流与温度的变化,关键放大级建议留出增益余量。
  • 考虑功耗和散热:TO-92 封装的 Pd 为 500 mW(典型数据表条件),在实际应用中需考虑环境温度与封装热阻,必要时通过降低工作电流或换用散热更好的封装来保证可靠性。
  • 注意基极-射极击穿:Vebo 为 5 V,基极正偏过大可能导致永久损伤,设计偏置与保护电路时需注意基极电压范围。
  • 漏电与偏置:低 Icbo 适合高阻抗输入电路,但应注意温度升高时漏电流增大,长期稳定性应通过温度补偿或适当偏置来控制。
  • 引脚与封装查验:不同厂家对 TO-92 引脚标识可能有所差异,布板或手工焊接前请参阅具体数据手册确认引脚序号与朝向。

五、封装、热管理与可靠性

BC556BTF 常见于 TO-92-3 直插封装,适合面包板与通孔 PCB 使用。该封装体积小、便于快速原型设计,但散热能力有限。在接近最大耗散功率工作时应:

  • 降低环境温度或增加间隔通风;
  • 避免长期在最大功耗下运行,设计时应按实际工况留有安全裕量;
  • 对于要求高可靠性的工业或高温环境,应参考厂商的热阻与功率降额曲线进行评估。

此外,器件对静电敏感,推荐在装配与测试过程中采取必要的防静电措施(如接地手环与防静电工作台)。

六、采购与替代件

BC556BTF 为安森美(ON)品牌产品,可通过正规代理与分销渠道采购。若需替代,可考虑参数相近的 PNP 小信号晶体管(关注 Ic、Vceo、hFE、fT 以及封装一致性)。在替换时应核对数据手册中的极限参数、增益曲线与热特性,确保在目标电路中的等效性能。

总结:BC556BTF 在低电流增益、低漏电与宽频响应方面表现出色,适合对噪声与增益有较高要求的小信号放大与通用电子电路,是面向通用放大与控制电路设计的可靠选择。若用于关键应用,请结合具体数据手册对工作点与热管理进行详尽评估。

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