WMSIC Electronic Components

ON FDS6675BZ

ModelFDS6675BZ
PackageSO-8
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ON FDS6675BZ
Type
ON
Unit
Electronic Component
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
FDS6675BZ
Electronic Component
1
Package
SO-8
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.207g
Electronic Component
1
Electronic Component
BM0145089065
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2.5W
Electronic Component
Electronic Component
Electronic Component
2500

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:FDS6675BZ P沟道 MOSFET

FDS6675BZ 是一款由安森美半导体(ON Semiconductor)推出的高性能 P 型 MOSFET,适用于各种电子应用。此款场效应管专为需要高效率、高功率密度的电源管理、开关电源、马达驱动和其他功率转换应用而设计。以下是对 FDS6675BZ 产品的详细介绍,包括其主要特性、应用场景及优势。

主要特性

  1. 基本电气参数:

    • 漏源电压(Vdss):最大30V,适用于中低压应用。
    • 连续漏极电流(Id):在25°C时可达11A,确保在较高负载条件下的可靠性和稳定性。
    • 最大功率耗散:在环境温度下可承受的最大功耗为2.5W,使其适用于各种功率应用场合。
  2. 导通电阻:

    • 在 Vgs 为 10V 时,其导通电阻(Rds On)最大值为 13毫欧。低导通电阻能够显著降低功率损耗,提高整体效率。
  3. 驱动电压:

    • 支持4.5V至10V的驱动电压,灵活适应多种控制电路设计。
  4. 阈值电压(Vgs(th)):

    • 最大阈值电压为3V @ 250µA,确保在适当的条件下可以可靠开启,增大了电路工作的灵活性。
  5. 栅极电荷(Qg):

    • 最大栅极电荷为62nC @ 10V,表明该MOSFET能够实现快速开关,适合高频开关电源应用。
  6. 输入电容(Ciss):

    • 在15V时输入电容最大值为2470pF。这一特性使其能够在电气噪声和电磁干扰(EMI)较大的环境中保持较好的性能。
  7. 工作温度:

    • 可以在-55°C至150°C的广泛工作温度范围内稳定运行,确保适应各种严苛环境中的应用。
  8. 封装与安装类型:

    • FDS6675BZ 采用8-SOIC表面贴装封装(0.154",3.90mm宽),便于在现代复杂电路板上的集成并实现小型化设计。

应用场景

FDS6675BZ MOSFET 以其优越的性能,适用于以下应用领域:

  • 开关电源:在DC-DC转换器中,通过高效开关技术提供高效率的电力转换。
  • 马达控制:适合电机驱动应用,能够承受在高负载条件下的频繁开关。
  • 负载开关:能有效控制电源的通断,以降低不必要的电力损耗。
  • 电池管理系统:在需要快速和可靠的开关时,优化电池的使用效率与寿命。

优势

  1. 高效性:低导通电阻和合理的阈值电压设计,减少开关损耗,提高系统效率。
  2. 灵活性:多种驱动电压可供选择,满足不同应用需求,适配更广泛的控制电路。
  3. 高可靠性:宽广的工作温度范围与良好的热性能,使得此器件在各种应用环境中稳定工作。
  4. 表面贴装设计:节省空间,便于实现现代电子产品的小型化设计。

总结

FDS6675BZ P沟道 MOSFET 是一款功能强大且性能优越的电子元件,广泛应用于电源管理和马达控制等领域。在市场上,其以高效、可靠和灵活的特色赢得了多个行业的青睐。无论是在高功率应用还是中低压控制场景中,FDS6675BZ 都能作为一种理想的选择,帮助设计师打造出高效、环保的电子产品。

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