WMSIC Electronic Components

ON NTZD3155CT1G

ModelNTZD3155CT1G
PackageSOT-563
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ON NTZD3155CT1G
Type
ON
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
NTZD3155CT1G
Electronic Component
1
Package
SOT-563
Electronic Component
1 N +1 P
Type
N +P
Electronic Component
MOSFET
Electronic Component
0.21g
Electronic Component
1
Electronic Component
BM0261469947
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
250mW
Electronic Component
Electronic Component
Electronic Component
4000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

NTZD3155CT1G 产品概述

一、基本信息

NTZD3155CT1G 是一款高性能的场效应管(MOSFET),由安森美半导体(ON Semiconductor)推出,采用SOT-563封装,适用于表面贴装的多种电子应用。该器件集成了一对N沟道和P沟道MOSFET,具有出色的电气性能和可靠性,非常适合于逻辑电平控制和开关应用。

二、核心参数

  1. 沟道类型:NTZD3155CT1G 由一个 N 沟道和一个 P 沟道 MOSFET 组成,适用于双极性电源电路和互补推挽配置。

  2. 漏源电压(Vdss):其漏源电压最高可达到20V,适用于低电压应用。

  3. 电流处理能力:

    • N沟道最大连续漏极电流(Id):540mA(典型值),430mA(最大值)。
    • P沟道的电流规格类似,能够满足各类低功率负载的需求。
  4. 导通电阻(Rds(on)):在4.5V的栅源电压下,540mA电流时的最大导通电阻为550毫欧,这表明该器件在工作过程中的功耗较低,能够提高整体电路的效率。

  5. 栅极阈值电压(Vgs(th)):在4.5V条件下,最大阈值电压为1V@250µA,确保了在低电平对MOSFET的有效控制,提升了电路的集成度和灵活性。

  6. 栅极电荷(Qg):在4.5V的栅源电压下,最大栅极电荷为2.5nC,能够实现快速开关操作,适用于高频PWM信号等应用场景。

  7. 输入电容(Ciss):在16V的条件下,最大输入电容为150pF,这有助于降低开关损耗,并增强驱动电路的响应速度。

  8. 功率/散热能力:器件功率最大为250mW,能够在多个应用环境下运行,具备良好的散热特性,支持较高的工作温度范围(-55°C ~ 150°C),适合汽车和工业环境等高温高负载条件。

三、适用场合

NTZD3155CT1G 被广泛应用于逻辑电平开关、负载驱动、DC-DC转换器、开关电源以及各种小型电机控制等应用。其出色的电气特性,使得该元器件在提升系统效率和降低功耗等方面具有明显的优势。由于其良好的热性能和稳健的工作范围,适合在恶劣环境条件下使用,如汽车电子和军事装备等。

四、封装与安装

本器件采用SOT-563封装,专为表面贴装设计,适合自动化生产,能够提高生产效率及组装质量。小型化的封装方式也有助于电路板的空间优化,使得设计更为紧凑,符合现代电子设备对小型化的需求。

五、总结

NTZD3155CT1G 作为一款高效能的MOSFET器件,结合了多种先进特性,凭借其低导通电阻、快速开关能力及广泛的工作温度范围,成为各种电子设备中不可或缺的一部分。其出色的电气性能及应用灵活性,使得它在众多电气设计中占有重要地位,是工程师在选择MOSFET时的理想选择。安森美的品牌效应和强大的技术支持更为其提供了额外保障。无论是在消费电子、工业控制还是汽车电子中,NTZD3155CT1G 都能为设计带来性能的提升与创新的可能性。

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