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ON BAT54CTT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON BAT54CTT1G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- BAT54CTT1G
- Electronic Component
- 1
- Package
- SC-75(SOT-523)
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.26g
- Electronic Component
- 1
- Electronic Component
- BM0209683193
- Current
- 200mA
- Diode
- 1
- Current(Ir)
- 2uA@25V
- (Vf)
- 800mV@100mA
- Electronic Component
- 55℃~+125℃
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BAT54CTT1G 产品概述（ON Semiconductor）
一、产品简介
BAT54CTT1G 是 ON (安森美) 提供的一款双肖特基二极管（1对共阴极），封装为 SC-75（SOT-523）。器件面向低电压快速切换和整流场合，具有较低的反向漏电和较好的浪涌承受能力，适用于便携式与空间受限的表面贴装电路。
二、主要参数一览
- 配置：1对共阴极（双肖特基，共阴脚）
- 直流整流电流：200 mA
- 非重复峰值浪涌电流（Ifsm）：600 mA
- 直流反向耐压（Vr）：30 V
- 反向电流（Ir）：2 μA @ 25 V
- 正向压降（Vf）：800 mV @ 100 mA
- 工作结温范围：-55 ℃ ～ +125 ℃
- 封装：SC-75 (SOT-523)
三、性能与特性解析
BAT54CTT1G 属于肖特基结构，典型优点是开关速度快、正向压降低并且反向恢复时间短。该型号在 100 mA 时的正向压降为 800 mV，表明在较大电流下压降会上升；在小电流工作点时其 Vf 会明显更低。反向漏电 2 μA（@25 V）对于电源保护与较低静态功耗场景是有利的。600 mA 的非重复峰值浪涌能力允许短时浪涌（如上电或突发电流）但长期平均电流仍以规定的 200 mA 为限。
四、典型应用场景
- 电源输入反向保护与肖特基整流
- 低压快恢复整流与耦合保护电路
- 电平转换、逻辑引脚保护与钳位电路
- 便携设备、移动终端及空间受限的 SMD 电路板
- 二极管 OR-ing 与欠压/过压旁路保护
五、封装与板级布局建议
SC-75（SOT-523）为超小型表贴封装，热阻相对较高。建议：
- 在焊盘周围布置足量的铜箔或散热线以帮助热量扩散；若允许，可增加多层板的过孔连接至大面积电源平面。
- 对于接近最大额定电流的应用，进行热仿真或测量以确保结温不超限；可按 P = I·Vf 计算耗散功率并与 PCB 散热能力匹配。
- 遵循器件厂商的回流焊工艺曲线与湿敏等级要求，避免过高温度或长时间高温暴露。
六、可靠性与选型建议
选择 BAT54CTT1G 时应考虑实际工作电流和浪涌需求：若长期工作电流接近 200 mA 或有频繁大浪涌，应评估是否需要更大封装或并联方案以降低结温与应力；若对正向压降非常敏感，可比较低 Vf 的大尺寸肖特基器件。最终设计中建议参考官方数据手册完整的温度系数、热阻与封装尺寸，进行必要的电气和热性能验证。
总结：BAT54CTT1G 在小封装与低漏电、快速切换场景中具有明显优势，适合对体积敏感、需要肖特基特性的便携与消费电子应用。
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