WMSIC Electronic Components

ON 2N7002WT1G

Model2N7002WT1G
PackageSC-70(SOT-323)
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ON 2N7002WT1G
Type
ON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
2N7002WT1G
Electronic Component
1
Package
SC-70(SOT-323)
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0116157311
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
330mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2N7002WT1G 产品概述

一、产品简介

2N7002WT1G是一款由安森美(ON Semiconductor)推出的N通道MOSFET(场效应管),广泛应用于各种电子设备。其设计充分考虑了高效能和可靠性,适合用于驱动、开关等多种电力电子应用。该器件表现出色,尤其在低电压及低电流条件下,其能耗和导通电阻特性非常优越。

二、主要参数

  1. 类型:N 通道MOSFET
  2. 漏源电压(Vdss):60V,适用于需要中等电压的应用场合。
  3. 连续漏极电流(Id):在25°C时,最大可达310mA,适合大多数低功耗电路。
  4. 驱动电压:最大导通电阻Rds(on) 电压为4.5V和10V时的性能。
  5. 导通电阻(Rds(on)):在不同Id和Vgs条件下,最大导通电阻为1.6Ω(在500mA和10V条件下)。
  6. 栅极阈值电压(Vgs(th)):最大值为2.5V(在250µA时),确保在适当的栅极驱动电压下能够快速导通。
  7. 栅极电荷(Qg):在4.5V下为0.7nC,这使得其在高频开关应用中表现更加出色。
  8. 输入电容(Ciss):在20V,最大值为24.5pF,适合高频或快速开关应用。
  9. 功率耗散(Pd):最大为280mW(在Tj下),保持合理的散热性能。
  10. 工作温度:-55°C ~ 150°C,适用于严格的温度环境。
  11. 封装:表面贴装型,采用SC-70-3(SOT323)封装,使得其在紧凑型电路中更易于集成。

三、应用领域

2N7002WT1G作为N通道MOSFET,广泛应用于各种电子电路中,包括但不限于:

  • 开关电源:被广泛用于DC-DC转换器、线性稳压器等。
  • 低功耗电路:包括便携设备,因其良好的导通特性和低功耗特性。
  • 驱动电路:如电机驱动和继电器驱动应用,可以提供出色的开关性能和效率。
  • 信号开关:在小信号电路和模拟信号开关中显示出极高的可靠性。

四、设计考虑

在设计阶段,应尽量对电流和电压特性进行合理规划,以避免元件过载。依据该器件的额定值,可以在设计电路时设定合适的Vgs来确保器件在合适的工作区域内运行。其较高的热稳定性和温度范围使其适合在较高温度环境下使用,但在实际应用中仍需对其散热性能特别关注,合理评估实际使用条件下的功耗,以确保安全稳定。

五、结论

2N7002WT1G是一款值得信赖的N通道MOSFET,凭借其优异的性能参数和宽广的应用范围,被广泛应用于现代电子工程中。其低导通电阻和高温工作范围使其成为良好的选择,尤其是在开关电源、低功耗电路及驱动应用领域。选择合适的器件并在设计时充分考虑其特性,将能够帮助设计人员实现更加高效和可靠的电路解决方案。无论是小型便携设备还是工业控制系统,2N7002WT1G都能提供所需的性能表现。

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