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ON MBRS3200T3G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON MBRS3200T3G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- MBRS3200T3G
- Electronic Component
- 1
- Package
- SMB(DO-214AA)
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.213g
- Electronic Component
- 1
- Electronic Component
- BM0020306944
- Current
- 3A
- Diode
- 1
- Current(Ir)
- 1mA@200V
- (Vf)
- 840mV@3A
- Electronic Component
- 65℃~+175℃
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：MBRS3200T3G 肖特基二极管
1. 概述
MBRS3200T3G是由ON Semiconductor（安森美半导体）生产的一款高性能肖特基二极管，具备低正向电压降和快速恢复特性，特别适合于要求高效率和高稳定性的电力电子应用。此二极管在设备中的关键作用是提供高效的整流功能，常见于开关电源、逆变器及电池充电器等应用场景。
2. 主要特性
- 制造商：ON Semiconductor（安森美半导体）
- 零件状态：有源，适合各类现代电子设备
- 二极管类型：肖特基二极管，具备快速恢复特性
- 额定电流（Io）：3A，是相对较大的使用电流，适合支持大功率应用
- 工作温度范围：-65°C 至 175°C，使其在极端环境下也能正常工作，适合军用和航空航天等领域
- 封装类型：SMB（DO-214AA），表面贴装型，便于自动化生产和装配
- 直流反向电压（Vr）：最大200V，能够处理较高的反向电压，适用于多种高压应用
- 正向电压（Vf）：840mV @ 3A，表明在3A电流条件下，二极管的低正向电压降，能够降低能量损耗
- 反向泄漏电流：1mA @ 200V，表明其良好的反向性能，既能承受高压又能减少损失
3. 应用场景
MBRS3200T3G二极管广泛应用于多个领域，主要包括：
- 开关电源：在电源转换过程中提供高效的整流功能，有效降低电源损耗，提升工作效率。
- 逆变器：在太阳能逆变器及UPS系统中，MBRS3200T3G可用于整流及保护电路，支持高负载应用。
- 电池充电器：在电池管理系统中，具备低正向电压的特点，使充电过程更加高效，延长电池使用寿命。
- 其他电子设备：也可应用在家电、通讯设备及车辆电子设备中，提升设备性能和可靠性。
4. 性能优势
- 高效率：由于其低正向电压降，MBRS3200T3G在高负载条件下能够极大地降低能量损耗，提升系统的整体效率。
- 快速响应：其快速恢复特性让它能迅速响应电流变化，这在需要快速电流切换的应用中尤为重要。
- 耐高温性：超广的工作温度范围使其能够在极端环境下稳定工作，确保设备的可靠性，尤其适合于高温作业环境。
5. 总结
作为ON Semiconductor旗下的高性能肖特基二极管，MBRS3200T3G凭借其优异的电气特性和稳定性，成为电子设计工程师的首选器件之一。其适应性强、性能卓越，适合于各种复杂的电气环境和需求，是现代电力电子设备不可或缺的组成部分。无论是在新能源、通信设备还是传统工业应用中，MBRS3200T3G都展示出了极强的市场竞争力，为众多行业提供了高效、可靠的解决方案。
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