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ON ESD7181MUT5G
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON ESD7181MUT5G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- ESD7181MUT5G
- Electronic Component
- 1
- Package
- 0201
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.01g
- Electronic Component
- 1
- Cj- Capacitor
- 0.3pF
- Electronic Component
- BM0259707236
- Operating Temperature
- 55℃~+150℃
- Voltage
- 35V
- Electronic Component
- IEC 61000-4-5；IEC 61000-4-2
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ESD7181MUT5G 产品概述
产品简介
ESD7181MUT5G 是由安森美（ON Semiconductor）推出的一款高性能齐纳二极管，专为保护敏感电子设备免受静电放电（ESD）和瞬态电压过载的影响。该器件特别适用于射频（RF）天线应用，能够在宽频范围内有效地抑制电压尖峰。
关键特性与参数
类型与通道：
- ESD7181MUT5G 是一款单通道齐纳二极管，设计用于提供反向电压保护。
电压参数：
- 最大反向断态电压为 18.5V，具备较高的电压承受能力，但在击穿时最低电压为 20.5V，能够有效保护电路不受过压损害。
- 在不同的瞬态电流峰值（Ipp）情况下，最大箝位电压为 35V（标准），确保在剧烈电流变化时不会使电路组件受到损害。
脉冲电流特性：
- 本器件在10/1000µs脉冲下的峰值电流为 1A，保障高功率场合的可靠性。同时，对于8/20µs的脉冲，具备同样的良好性能表现。
频率特性：
- 器件在 1 MHz 频率下，表现出极低的电容值（0.3pF），这对于 RF 应用至关重要，有助于减少信号损失，提高信号的传输品质。
工作温度范围：
- ESD7181MUT5G 可在 -55°C 到 150°C 的温度范围内正常工作，适合于各种极端环境下的应用。
安装和封装类型：
- 该元件采用表面贴装型安装方式，封装尺寸为 2-X3DFN（0.62x0.32 mm），便于在高密度电路板上使用。
应用场景
ESD7181MUT5G 主要应用于射频（RF）天线及相关设备中，用于保护敏感的射频信号处理器、调制解调器、导向设备等。它能够防止由于静电放电及瞬间过压引起的电路损坏，从而延长设备的使用寿命，确保其性能稳定性。
该器件也适用于消费电子、通信设备以及自动化设备中对电压保护有严格要求的场合。例如，智能手机、平板电脑、以及其他便携式设备中，均可有效利用其高速的响应特性来防护多种可能的电压干扰。
结论
ESD7181MUT5G 是一款具有卓越电气特性和高可靠性的齐纳二极管，专为处理瞬态电压而设计。它的高电压容忍度、低电容特性以及广泛的工作温度范围，使其成为保护射频天线和相关电子设备的理想选择。安森美在此领域的专业经验和技术应用，使得此款产品在市场上拥有极高的竞争力。无论是在高频通信、电信设备、还是在日常消费电子产品中，ESD7181MUT5G 都能够提供卓越的保护方案，确保设备的安全和性能。
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