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ON MC74HCT08ADR2G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON MC74HCT08ADR2G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- MC74HCT08ADR2G
- Electronic Component
- 1
- Package
- 14-SOIC
- Electronic Component
- Logic Gate
- Electronic Component
- 74HCT
- Electronic Component
- 0.36g
- Electronic Component
- 1
- Channel Count
- 4
- Electronic Component
- BM0258839820
- Operating Temperature
- 55℃~+125℃
- Operating Voltage
- 2V~6V
- Logic Type
- and Gate
- Current(IOH)
- 4mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MC74HCT08ADR2G 产品概述
一、概述
MC74HCT08ADR2G 是 ON Semiconductor（安森美）推出的四通道与门逻辑器件，属于 74HCT 系列高速 CMOS 逻辑家族。每通道提供一个两输入与门，适合在需与门逻辑、信号整形和门阵列等场合使用。器件在低静态功耗与 TTL 电平兼容性之间取得平衡，适配多种数字系统。
二、主要参数
- 逻辑类型：与门（AND）
- 通道数：4（四个独立两输入与门）
- 工作电压：2 V ～ 6 V
- 静态电流 (Iq)：典型 1 μA（低功耗）
- 输出驱动：IOL = 4 mA，IOH = 4 mA
- 输入阈值：VIH = 2.0 V，VIL = 0.8 V（与 TTL 电平兼容）
- 传播延迟：tpd = 17 ns (@ VCC = 5 V, CL = 50 pF)
- 工作温度范围：-55 ℃ ～ +125 ℃
- 封装：14-SOIC（表面贴装）
三、功能特性
- HCT 系列特点：采用高速 CMOS 结构，同时对 TTL 输入电平友好，便于与旧有 TTL 逻辑互联。
- 低静态电流：待机功耗小，适用于对电源功耗敏感的设计。
- 小封装、易焊接：14-SOIC 便于表面贴装生产与散热管理。
- 可在较宽电源电压范围内工作，适配多种电源方案。
四、典型应用
- 门控信号生成与逻辑合成（Glue Logic）
- 数字控制与复位电路中的逻辑判断
- 微控制器外围逻辑接口与片选逻辑
- 低速数据路径的开关与使能控制
五、设计注意事项
- 电源去耦：在 VCC 与 GND 之间放置 0.1 μF 陶瓷去耦电容，靠近芯片管脚以抑制瞬态噪声。
- 输入不悬空：未使用的输入应接地或拉到确定电平，避免浮空引起功耗或不确定输出。
- 输出驱动能力有限：单个输出推荐驱动不超过 4 mA，如需驱动较大负载请加缓冲器或驱动器。
- 负载与延迟：传播延迟受负载电容影响，较大负载会增加 tpd，应在时序设计中考虑裕量。
- 工作电压选择：尽管器件标称 2 V～6 V，可在目标系统电压下验证输入阈值与噪声裕度，保证可靠工作。
六、可靠性与采购提示
- 器件适用温度范围宽，可满足工业级与部分高可靠性应用。
- 选择带有环境与溯源认证的供应商渠道采购，确认包装与封装型号（14-SOIC）以匹配生产工艺。
该器件以其 TTL 电平兼容性、低静态功耗和紧凑封装，适合用于各类数字逻辑集中式或分布式设计中，作为可靠的与门逻辑单元。
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