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ON NTR5198NLT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ON NTR5198NLT1G
- Type
- ON
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- NTR5198NLT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0093065451
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：NTR5198NLT1G
基本信息
NTR5198NLT1G是一款由安森美半导体（ON Semiconductor）制造的高性能n沟道金属氧化物场效应管（MOSFET）。本产品采用小型SOT-23-3封装，适用于表面贴装设备。NTR5198NLT1G在广泛的电源管理和开关应用中表现优异，能够满足要求高效率和小体积的设计需求。
主要特性
- 电流能力：在25°C环境温度下，NTR5198NLT1G的连续漏极电流（Id）最大可达1.7A，这使其非常适合各类负载驱动。
- 工作电压：该器件的漏源电压（Vdss）可达60V，足以满足多种高压应用的需求。
- 导通电阻：在10V的栅极驱动电压下，其导通电阻（Rds(on)）的最大值为155毫欧，对于高频开关应用具有优良的性能。
- 栅源电压：支持的栅源电压（Vgs）范围为±20V，提供了建立稳健开关状态的灵活性。
- 栅极电荷：在4.5V驱动电压下，最小栅极电荷（Qg）为2.8nC，显示了该部件具备快速开关特性，能够实现高频率操作。
- 低阈值电压：在250µA的条件下，NTR5198NLT1G的阈值电压（Vgs(th)）最大为2.5V，保证了在较低电压下的有效导通。
包装与封装
NTR5198NLT1G以卷带（TR）形式供应，适合自动化贴装。其SOT-23-3封装设计使其占用空间小，便于在板级应用中实现高集成度的设计。
工作环境
该器件工作温度范围从-55°C到150°C，具有优越的热稳定性。这种广泛的温度适应性使其可广泛应用于汽车、工业控制和消费电子产品等高温环境。
应用场合
NTR5198NLT1G适用于多种应用场合，包括：
- 电源管理：该器件能够有效地管理功率转换，并在开关电源（SMPS）中扮演关键角色。
- 电机驱动：由于其高电流能力和快速开关特性，适合用于直流电机和步进电机的驱动电路。
- LED驱动：在LED照明应用中，当需要高效能的开关控制时，NTR5198NLT1G能够很好地胜任。
- 逆变器：适用于光伏逆变器和其他能量转换系统，确保高效的性能。
结论
NTR5198NLT1G是一个高效能、温度范围广、适合多种应用的n沟道MOSFET。其优越的电流能力、低导通电阻和快速开关特性，使其成为现代电子设计中一个不可或缺的元件。通过选择NTR5198NLT1G，工程师能够在设计中实现更好的效率、更小的尺寸和更高的可靠性。无论是在消费电子、工业控制还是汽车电子领域，NTR5198NLT1G都能提供卓越的性能和可持续的解决方案。
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