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ON MMBZ5257BLT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ON MMBZ5257BLT1G
- Type
- ON
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- MMBZ5257BLT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Zener Diode
- Electronic Component
- 0.03g
- Electronic Component
- 1
- (Zzk)
- 700Ω
- (Zzt)
- 58Ω
- Electronic Component
- BM0227516230
- Diode
- 1
- Current(Ir)
- 100nA
- Power Dissipation(Pd)
- 225mW
- Electronic Component
- 31.35V~34.65V
- Electronic Component
- 65℃~+150℃
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBZ5257BLT1G稳压二极管产品概述
一、产品基本信息
MMBZ5257BLT1G是安森美（ON Semiconductor） 推出的一款独立式稳压二极管，采用SOT-23表面贴装封装，属于小型化稳压器件范畴。该型号针对低功耗、高密度电路设计优化，具备稳定的电压调节能力与宽环境适应性，是工业、消费电子及通信领域的常用稳压元件。
二、核心电气参数解析
该器件的关键电气性能参数明确且适配多场景需求，核心参数如下：
- 稳压特性：标称稳压值为33V，实际工作稳压范围覆盖31.35V~34.65V（包含±5%设计余量）；测试电流下动态阻抗（Zzt）为58Ω，拐点电流下阻抗（Zzk）为700Ω，阻抗稳定可抑制负载波动对输出电压的影响。
- 反向漏电流：25℃环境下反向电流（Ir）仅100nA，低漏电流显著降低待机功耗，适合电池供电设备。
- 功耗与温度：最大耗散功率（Pd）为225mW，满足中小功率电路需求；工作结温范围覆盖**-65℃~+150℃**，适应极端高低温环境。
三、关键性能特点
基于参数优势，该器件具备以下核心亮点：
- 稳压精度与余量平衡：±5%稳压范围既保证精度，又预留设计裕量，兼容不同负载条件下的电压波动。
- 低功耗适配性：100nA反向漏电流远低于普通稳压管，减少待机损耗，延长电池续航。
- 宽温环境兼容性：-65℃至+150℃结温范围，可在严寒（户外基站）、高温（汽车电子）场景稳定工作。
- 小型化封装优势：SOT-23封装体积仅约2.9×1.6×1.1mm，占用PCB空间小，适配高密度集成设计。
四、典型应用场景
该器件的性能特点使其在多领域广泛应用：
- 便携式电子：智能手机、智能手表的电源管理电路，辅助稳压同时适配小体积需求。
- 工业控制：PLC、传感器节点的参考电压源，宽温特性适应工业现场高低温变化。
- 通信设备：基站、路由器的信号偏置电路，稳定33V电压为射频模块提供可靠偏置。
- 消费电子：电视、机顶盒的过压保护辅助电路，配合元件实现过压钳位，保护敏感器件。
五、封装与可靠性说明
SOT-23封装兼容自动化贴装生产线，提升生产效率；安森美对该型号进行严格可靠性测试（温度循环、湿度老化），符合工业级标准，长期工作稳定性可靠。
总结而言，MMBZ5257BLT1G凭借稳定稳压性能、低功耗、宽温适应性及小型化封装，成为多领域电路设计的可靠选择，尤其适合对体积、功耗及环境适应性有严格要求的场景。
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