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ON MBRS330T3G
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON MBRS330T3G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- MBRS330T3G
- Electronic Component
- 1
- Package
- SMC(DO-214AB)
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.337g
- Electronic Component
- 1
- Electronic Component
- BM0145049969
- Current
- 3A
- Diode
- 1
- Current(Ir)
- 2mA@30V
- (Vf)
- 500mV@3A
- Electronic Component
- 65℃~+150℃
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MBRS330T3G 产品概述
概述
MBRS330T3G 是由安森美（ON Semiconductor）制造的一种高效能肖特基二极管，结合了卓越的电气性能和可靠的工作条件，广泛用于电子电路中的整流和保护应用。该器件的设计目标是满足现代电子设备对高效率和低功耗的要求，非常适合在诸如电源模块、开关电源和电池管理系统等关键应用中使用。
基本参数
- 制造商: ON Semiconductor
- 二极管类型: 肖特基
- 额定电流 (Io): 4A
- 封装形式: SMC (DO-214AB)
- 工作温度范围: -65°C ~ 150°C
- 最大反向电压 (Vr): 30V
- 正向电压 (Vf): 500mV @ 3A
- 反向泄漏电流: 2mA @ 30V
- 封装类型: 表面贴装型 (SMC，卷带 TR)
产品特点
高效能: MBRS330T3G 特别设计用于降低在二极管导通状态下的正向压降（Vf），其在额定电流 3A 时的正向压降为仅 500mV。这种低正向压降有助于降低能源损耗，从而提升整体能效。
快速恢复: 该元件具备快速恢复特性，恢复时间小于 500ns，可保证高频应用中电流的有效控制，减少由于开关延迟引起的信号失真。
强耐温特性: MBRS330T3G 的工作温度范围广，能够在 -65°C ~ 150°C 的环境中稳定工作，适用于高温和低温环境中的各种工业和消费电子应用。
较低的反向泄漏电流: 在最大反向电压 30V 条件下，反向泄漏电流仅为 2mA，这使得该二极管在关断状态下消耗的能量极低，提高了系统的整体稳定性和可靠性。
应用场景
MBRS330T3G 广泛应用于以下领域：
电源管理系统: 在开关电源和线性电源中用于整流，保证电能的高效转化。
充电器和电池管理: 在充电设备和电池管理系统中，肖特基二极管利用其快速响应和低损耗特性，提供理想的路径来避免能量流失。
保护电路: 在各种电子设备中，MBRS330T3G 可用于反向极性保护和过压保护，保护电子元件免受电流反向流动的影响。
功率模块: 由于其高额定电流和耐温性能，适合在功率放大器和高功率转换器中使用。
总结
MBRS330T3G 是一款性能卓越的肖特基二极管，凭借其优异的热稳定性、低正向压降及快速恢复特性，为现代电子设备带来了理想的解决方案。无论是在电源管理、充电和保护电路的应用中，MBRS330T3G 都能够提供高效、可靠的服务，确保系统在各种工作条件下的稳定性与高效性。随着科技的快速发展，MBRS330T3G 作为一种基础组件极大地推动了电子设备的进步与创新。
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