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ON MM3Z12VT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON MM3Z12VT1G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- MM3Z12VT1G
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Zener Diode
- Electronic Component
- 0.028g
- Electronic Component
- 1
- (Zzk)
- 80Ω
- (Zzt)
- 25Ω
- Electronic Component
- BM0021491823
- Diode
- 1
- Current(Ir)
- 100nA
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- 11.4V~12.7V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MM3Z12VT1G 产品概述
产品简介
MM3Z12VT1G 是一款高性能的稳压二极管，由全球知名的半导体制造商安森美（ON Semiconductor）设计与生产。该器件在微电子应用中广泛使用，特别是在电压管理和保护电路中，以其优异的参数和可靠性，适用于要求严苛的环境和条件。
主要特性
稳压特性： MM3Z12VT1G 的标称齐纳电压（Vz）为12V，且具有±5%的容差。这使其在需要稳定12V电压输出的电路中极具价值，尤其是在电源管理和信号调理电路中。
功率处理： 本器件的最大功率输出为300mW，这使其能够处理较大功率的应用，同时有效降低过载时可能发生的损坏风险。此外，反向泄漏电流仅为100nA（在8V时），这表明即使在高电压条件下，MM3Z12VT1G 也能保持高效能和低功耗的特点。
阻抗与温度特性： 该稳压二极管的最大阻抗（Zzt）为25Ω，这在确保电压稳定性的同时，能够有效减少信号失真。值得注意的是，MM3Z12VT1G 在极端的工作环境下依然保持稳定，工作温度范围为-65°C至150°C，使其可广泛应用于航空航天、汽车电子及其他工业设备中。
表面贴装封装： MM3Z12VT1G 采用SOD-323封装，支持表面贴装类型，适合高密度电子电路设计。这种小型化封装不仅节省了电路板的空间，还简化了自动化焊接和装配过程，提高了生产效率。
正向电压特性： 该器件在10mA的条件下，其正向电压（Vf）为900mV，这令其在正向偏置条件下展现良好的导通性能，确保了器件的快速响应。
应用场景
MM3Z12VT1G 在许多电子产品中扮演着重要角色，主要包括：
- 电源管理：作为稳压二极管，MM3Z12VT1G 可以用于电源模块和稳压电路中，确保输出电压的稳定性，预防电流波动对电路的影响。
- 保护电路：其低反向泄漏特性和高工作温度范围使得该器件在过电压或反向电流条件下能够保护敏感的电子元器件，避免因瞬态电压或过载而导致的损坏。
- 汽车电子：由于其耐高温的特性，适合用于汽车应用中，如车载电源和控制单元等。
- 消费电子：在手机、平板电脑及其他便携设备中，稳压二极管提供稳定的电压基线，进而确保设备的正常性能。
总结
MM3Z12VT1G 稳压二极管以其12V的稳压特性、300mW的功率以及07-150°C的宽广工作温度范围，成为现代电子产品不可缺少的重要元件之一。无论是在电源管理、保护电路还是汽车电子等领域，其高效能和可靠性都使其能够满足各种应用需求。如果您的设计需要一个小型强大的稳压解决方案，MM3Z12VT1G 绝对是一个值得推荐的选项。
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