WMSIC Electronic Components

PANJIT BAV103_R1_10001

ModelBAV103_R1_10001
PackageMiniMELF
BrandPANJIT
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
PANJIT BAV103_R1_10001
Type
MINIMELF
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
PANJIT
Electronic Component
BAV103_R1_10001
Electronic Component
1
Package
MiniMELF
Electronic Component
Switch Diode
Electronic Component
0.04g
Electronic Component
1
Electronic Component
BM0262648739
Current
200mA
Diode
1
Current(Ir)
100nA
(Vf)
1V@100mA
Power Dissipation(Pd)
300mW
Electronic Component
65℃~+175℃
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BAV103_R1_10001 产品概述

一、核心参数

  • 型号:BAV103_R1_10001(PANJIT 强茂)
  • 器件类型:小信号高压表面贴装开关二极管
  • 封装:MiniMELF(玻璃/金属圆柱型微型封装)
  • 正向压降 (Vf):1.0V @ 100mA
  • 直流反向耐压 (Vr):200V
  • 整流电流:200mA(连续)
  • 耗散功率 (Pd):300mW
  • 反向电流 (Ir):100nA(典型/在规定Vr下)
  • 反向恢复时间 (Trr):75ns
  • 非重复峰值浪涌电流 (Ifsm):1A

二、主要特点

  • 高耐压:200V 的反向耐压适合高电压信号和脉冲环境,常用于电源端与线电平电路中。
  • 小信号与开关功能兼顾:正向压降约1V 在100mA 工况下仍保持较低损耗,适合小电流开关、整流及钳位用途。
  • 快速恢复性能:75ns 的反向恢复时间使其在中频开关与脉冲应用中表现良好,减少开关损耗与寄生振铃。
  • 极低漏电:反向电流仅100nA,有利于高阻抗电路与测量电路的稳定性。
  • 紧凑封装:MiniMELF 体积小,适合高密度表面贴装,且封装对机械震动和过压有良好耐受性。

三、典型应用场景

  • 小信号开关与脉冲整流:用于高速信号路径、逻辑隔离、脉冲成形。
  • 线性及开关电源:作为高压侧小电流整流、钳位与浪涌吸收元件。
  • 保护与钳位电路:输入浪涌保护、反向保护及简单电压钳制。
  • 仪表与测量电路:因低漏电特性,适合高阻抗输入、采样保持电路。
  • 通信与电视前端:用于射频/视频前端的保护与切换(视频带宽与具体频率而定)。

四、封装与焊接注意事项

  • MiniMELF 为圆柱状微型封装,易于回流焊与波峰焊,但对贴装定位要求较高。推荐使用专用真空吸嘴或夾具,避免滚动和偏位。
  • 引脚/封装表面通常需要适应标准无铅回流曲线;建议参考厂商回流焊温度曲线以保证焊点可靠性。
  • 热管理:器件Pd 为300mW,功耗受限,长期在高电流或高环境温度下工作需在PCB上采用合适铜箔散热与降低占空比的设计。

五、设计与选型建议

  • 若电路持续电流接近200mA 且环境温度较高,建议留有裕量或采用更大功率器件;若需要更快恢复或更低正向压降,可考虑高速整流或肖特基二极管替代。
  • 在脉冲应用中,关注反向恢复时间与浪涌能力(Ifsm 1A),确认脉冲波形下热应力与电气冲击不会超出器件极限。
  • 对于高精度测量电路,确认Ir 给出的测试条件(温度/电压),并在电路中采取屏蔽与泄漏管理措施以发挥低漏电优势。

六、典型电路示例与使用注意

  • 作为信号整流:串联放置于信号路径,对正向导通与反向隔离负责,注意正向压降对信号幅度的影响。
  • 作为钳位元件:并联于敏感节点以限制电压尖峰,需评估钳位电流与热耗散。
  • 使用时应尽量避免长期在最大额定值下工作,为可靠性预留安全裕度。焊接后建议进行常规电气测试与外观检查,确保无裂纹或偏位。

总结:BAV103_R1_10001 以其200V 的耐压、低漏电和75ns 的恢复时间,在需要高压小信号开关与保护的场合提供了性价比较高的选择。设计时应注意功耗与热管理,并根据具体频率与电流需求评估是否为最佳替代件。

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