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PANJIT PJA3461_R1_00001
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- PANJIT PJA3461_R1_00001
- Type
- PANJIT
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PANJIT
- Electronic Component
- PJA3461_R1_00001
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM0227581132
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.25W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 430pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PJA3461_R1_00001 产品概述
一、概述
PJA3461_R1_00001 是强茂（PANJIT）推出的一款 P 沟道增强型 MOSFET，单颗器件、SOT-23 小封装，适合轻载低功耗开关与电源管理场景。器件额定漏源电压 Vdss 为 60V，适用于中低压逆向切换或高侧开关应用。
二、主要电气参数
- 极性：P 沟道
- Vdss（漏源电压）：60V
- Id（连续漏极电流）：1.9A
- RDS(on)（导通电阻）：190mΩ @ Vgs = 10V，Id = 1.9A
- Vgs(th)（阈值电压）：约 1.88V
- Qg（总栅电荷）：8.3nC @ 10V
- Ciss（输入电容）：430pF @ 30V
- Crss（反向传输电容）：29pF @ 30V
- Pd（耗散功率）：1.25W（封装热限）
- 工作结温范围：-55℃ ~ +150℃（Tj）
三、典型应用场景
- 便携式设备的电源反向保护与负载断开（高侧开关）
- 小功率逆变/DC-DC 拨配电路
- 电池管理系统（BMS）中的放电路径控制
- 交流负载或信号切换电路
四、设计与布局建议
- 由于为 P 沟道并在 SOT-23 封装，导通电阻相对较高，适用于 1A 量级及以下场合；若长时间高电流使用，应评估热耗散。
- 栅极电荷 Qg = 8.3nC 表明开关转换时需要考虑驱动能力与开关损耗；高速 PWM 场景建议在栅极串联小电阻以抑制振铃，并在驱动端做好驱动缓冲。
- Ciss/Crss 值影响开关过渡与米勒效应，布局时缩短栅-漏回路长度，靠近器件放置驱动回路。
- 封装 Pd = 1.25W 为理论耗散上限，实际使用中请按 PCB 散热、铜箔面积和环境温度做热仿真与降额设计。
五、封装与可靠性
- SOT-23 小封装便于空间受限应用，但散热能力有限；建议配合较大铜箔热扩散区或多层板过孔散热。
- 宽温范围（-55℃~150℃）适应工业级环境，但在高温工况务必考虑 RDS(on) 随温度上升而增大的影响。
六、选型建议
- 若需求为低压大电流（>2A）或需要更低导通损耗，考虑更大封装或更低 RDS(on) 的替代型号。
- 用于开关频率较高的场合，评估开关损耗（由 Qg、Ciss、Crss 与频率决定），必要时选择栅极驱动能力更强的驱动器或改用 N 沟道+驱动方案以提高效率。
PJA3461_R1_00001 在体积受限且需中等电压容限的高侧开关与电源管理场景中具有良好适配性，选型时请综合考虑热设计与驱动要求以确保可靠运行。
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