WMSIC Electronic Components

SHIKUES MMBT5087

ModelMMBT5087
PackageSOT-23
BrandSHIKUES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SHIKUES MMBT5087
Type
SHIKUES
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SHIKUES
Electronic Component
MMBT5087
Electronic Component
1
Package
SOT-23
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.035g
Electronic Component
1
Electronic Component
BM0225765049
Transistor Type
PNP
Frequency(f T)
100MHz
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
50mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBT5087 产品概述

一、概述与定位

MMBT5087 是一款小信号 PNP 双极型晶体管,SHIKUES(时科)品牌,SOT-23 封装。器件面向便携、消费电子和工业控制等需要体积小、驱动灵活的场合,既可做开关也可用于低功耗放大与偏置电路。器件在低电流工作点拥有较高的直流电流增益,适合做电流镜、差分放大及高侧开关等应用。

二、主要电气参数

  • 直流电流增益 hFE:150(典型,Ic=1 mA,Vce=5 V)
  • 集电极截止电流 Icbo:50 nA(典型)
  • 集电极-射极击穿电压 Vceo:45 V(典型/额定)
  • 特征频率 fT:100 MHz(典型)
  • 额定集电极电流 Ic:50 mA(常规额定)
  • 耗散功率 Pd:200 mW(典型封装条件下);部分资料或封装变种描述为 350 mW,请以最终器件数据手册为准
  • 射基极击穿电压 Vebo:5 V
  • 集电极-射极饱和电压 VCE(sat):约 650 mV(按标注条件测量)

(注:上述参数为样本参考值,实际选型时请核对厂家完整数据手册及测试条件。)

三、典型特性与优势

  • 高 hFE 在小电流区表现良好,有利于低偏流放大和高阻抗电路设计。
  • 低 Icbo 表明在截断状态下漏电小,适合低功耗/待机电路。
  • 100 MHz 的 fT 使其在中高频信号处理(音频、低速数模混合电路)仍有良好性能。
  • SOT-23 小封装便于高密度 PCB 布局并降低占板面积,适合便携设备。

四、典型应用场景

  • 小信号放大器与前置放大电路
  • 高侧开关、载流开关和电平转换
  • 电流镜、偏置与温度补偿电路
  • 消费类电子、仪表、传感器接口及低功耗模块

五、封装与热管理建议

SOT-23 封装对功耗和热阻有限制。若器件在接近额定 Pd 工作,需通过增加 PCB 铜箔面积、散热层或热过孔改善散热。在高 ambient 温度或持续开关大电流场合,应按数据手册进行功率整定和温升计算,必要时选择更大功率封装或并联/替代器件。

六、选型与使用注意事项

  • 核对 Vceo(45 V)与实际电路最大电压,留有安全裕度。
  • 注意 Vebo≈5 V,基极相对发射极不能承受过高反向电压。
  • 驱动基极时保证足够基极电流以达到期望饱和电压,留意 VCE(sat) 在不同 Ic/Ib 条件下变化。
  • 若电路需承受更大电流或耗散,考虑额定更高的封装或器件替代。
  • 建议在批量使用前查看最新产品规格书与可靠性数据,必要时做样片测试验证实际温升与寿命。

产品以其小尺寸、高增益与中等频率特性,在众多低功耗与空间受限的设计中具有良好性价比。选型时请以 SHIKUES 的正式数据手册为准,针对具体应用做电气与热设计验证。

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