WMSIC Electronic Components

SHIKUES MMBF170

SHIKUES MMBF170
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Product image

ModelMMBF170
PackageSOT-23
BrandSHIKUES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

19 specifications

Core information

Product name
SHIKUES MMBF170
Type
SHIKUES
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SHIKUES
Electronic Component
MMBF170
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.035g
Electronic Component
1
Electronic Component
BM0225764813
Power Dissipation(Pd)
830mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V
Capacitor(Ciss)
30pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBF170 场效应管（MOSFET）产品概述

概要

MMBF170 是一种由 SHIKUES（时科）品牌生产的场效应管（MOSFET），属于N沟道类型。该器件以其高性能、紧凑的封装和广泛的应用场景而受到广泛欢迎。以下是对 MMBF170 的详细介绍。

基础参数

  • 功率（Pd）: 300 mW
    • 这表明该MOSFET在正常操作条件下可以承受的最大功率。
  • 商品分类: 场效应管（MOSFET）
    • 属于半导体器件的一种，用于开关和放大电信号。
  • 导通电阻（RDS(on)@Vgs, Id）: 5 Ω @ 10 V, 200 mA
    • 当门源电压（Vgs）为10V，漏极电流（Id）为200mA时，导通电阻仅为5Ω，表明该MOSFET在导通状态下具有较低的内部电阻，减少能量损耗。
  • 漏源电压（Vdss）: 60 V
    • 最高允许的漏源电压，超过此值可能导致器件损坏。
  • 类型: 1个N沟道
    • N沟道MOSFET需要正门源电压来打开通道。
  • 连续漏极电流（Id）: 500 mA
    • 最大允许的连续工作电流，确保器件在长时间运行中不会过热或损坏。
  • 阈值电压（Vgs(th)@Id）: 3 V @ 1 mA
    • 当门源电压达到3V时，漏极电流将达到1mA，标志着MOSFET开始进入导通状态。

封装

  • 封装类型: SOT-23
    • 小型化的三引脚封装，适合于空间有限的应用场景，提高了PCB设计的灵活性。

应用场景

MMBF170 因其高性能和紧凑的设计，适用于各种电子设备和系统，包括但不限于：

  • 电源管理
    • 作为开关元件用于DC-DC转换器、电源模块等。
  • 驱动电路
    • 用于驱动LED灯、电机、继电器等负载。
  • 信号放大
    • 在音频或视频信号放大电路中作为前级放大器。
  • 自动控制系统
    • 在工业自动化、机器人控制等领域作为控制和开关元件。

优势

  • 低导通电阻
    • 仅5Ω的导通电阻确保了低能量损耗和高效率。
  • 高耐压能力
    • 最高60V的漏源电压使其适用于较高压力下的应用。
  • 小型化封装
    • SOT-23封装节省空间，提高PCB设计的灵活性。
  • 低阈值电压
    • 仅3V的阈值电压使其易于驱动，特别适合于低电压系统。

使用注意事项

  • 过热保护
    • 确保在设计中提供适当的散热措施，以防止过热导致器件损坏。
  • 静电保护
    • 在处理和安装过程中，必须采取静电保护措施，以避免静电损伤。
  • 电压限制
    • 不要超过最大允许的漏源电压（60V）和连续工作电流（500mA）。

总结

MMBF170 是一款性能优异、应用广泛的N沟道MOSFET。其低导通电阻、 高耐压能力和小型化封装，使其成为各种电子设备和系统中的理想选择。通过了解其基础参数和应用场景，可以更好地利用这一器件，实现高效、可靠的电子系统设计。

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