WMSIC Electronic Components

SUPSiC GC3D20065A

ModelGC3D20065A
PackageTO-220-2
BrandSUPSIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SUPSi C GC3D20065A
Type
TO-220-2
Minimum package
50 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SUPSIC
Electronic Component
GC3D20065A
Electronic Component
1
Package
TO-220-2
Electronic Component
Diode
Electronic Component
3.004g
Electronic Component
1
Electronic Component
BM0258761860
Current
55A
Diode
1
Current(Ir)
60uA@650V
(Vf)
1.5V
Electronic Component
55℃~+175℃
Electronic Component
Electronic Component
Electronic Component
50

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

GC3D20065A 产品概述

GC3D20065A 是 SUPSiC(国晶微半导体)推出的一款高压碳化硅(SiC)肖特基结构整流二极管,面向高效率、高温和高频开关电源领域。器件在 650V 反向耐压条件下,提供了 55A 的整流电流能力,正向压降低至约 1.5V,反向漏电流仅 60μA(@650V)。额定工作结温范围宽泛:-55℃ 至 +175℃,并采用工业常用的 TO-220-2 封装,便于系统级散热和安装。

一、主要参数概览

  • 品牌:SUPSiC(国晶微半导体)
  • 型号:GC3D20065A
  • 整流电流(Ic):55 A
  • 正向压降(Vf):约 1.5 V(典型)
  • 直流反向耐压(Vr):650 V
  • 反向电流(Ir):60 μA @ 650 V
  • 工作结温(Tj):-55℃ ~ +175℃
  • 封装:TO-220-2

二、器件特点(性能亮点)

  • 低正向压降:约 1.5V 的 Vf 有助于在导通阶段显著降低导通损耗,提升整流效率。
  • 低漏电流:60μA(@650V)表明在高压阻断时保持较小的静态损耗,有利于高压侧可靠性。
  • 宽温度范围:-55℃ 至 +175℃ 工作结温适合新能源汽车、电力电子等高温工况。
  • 快速切换性能:SiC 肖特基结构天然无或极低的反向恢复特性,降低开关损耗,适应高频变换。
  • TO-220-2 封装:便于与散热片直接接触或安装在板载散热结构上,利于热管理与维修。

三、典型应用场景

  • 开关电源(SMPS)、功率因数校正(PFC)电路
  • 太阳能逆变器、储能系统的整流与自由轮回路
  • 车载充电机(OBC)、电驱系统的高压整流件
  • 不间断电源(UPS)、工业驱动与电力电子变换器
  • 高频、高温工作环境的电源模块和功率单元

四、封装与安装要点

GC3D20065A 提供 TO-220-2 标准封装,便于与散热片紧固或焊接至散热基板。安装时注意:

  • 请参照产品规格书确认引脚与散热片的电气连接关系(不同版本的引脚定义可能不同);
  • 使用合适的导热介质(导热膏或导热垫)以降低结-壳/壳-散热片热阻;
  • 固定螺钉扭矩要按制造商建议值执行,避免过紧导致封装损伤或过松影响热阻。

五、热管理与可靠性建议

  • 虽然器件允许高达 +175℃ 的结温,但为确保长期可靠性和降低寿命衰减,建议在典型应用中进行适度的结温降额(例如将连续工作结温控制在 125℃ 以下)。
  • 设计时考虑足够的散热面积和空气流动,必要时采用强制风冷或液冷方案。
  • 关注高温下反向漏流随温度上升的特性,在极端环境中应留有电路余量以防止热失控。
  • 在高频切换场合,注意器件的电磁兼容(EMI)与版面布局以减少尖峰电压和寄生振荡。

六、选型与设计提示

  • 若目标系统追求更低导通损耗或更高电流能力,可对比同系列更大电流或更低 Vf 的型号;若需更高电压等级,可选更大 Vr 的 SiC 器件。
  • 在并联使用多只器件以提升电流时,需做好电流共享和散热均衡设计。
  • 最终设计前,请以 SUPSiC 官方数据手册为准,确认引脚定义、最大额定值、热阻参数以及推荐的焊接/安装规范。

总结:GC3D20065A 以其 650V 的高压能力、55A 的整流电流和低 Vf、低 Ir 的组合优势,适合用于要求高效率、高温和高频特性的功率电子场合。合理的热设计与遵循规格书建议可发挥其最佳性能并保证长期可靠性。

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