WMSIC Electronic Components

TI TPD1E01B04DPLR

ModelTPD1E01B04DPLR
PackageX2-SON-2(0.3x0.6)
BrandTI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TI(Texas Instruments) TPD1E01B04DPLR
Type
TI
Minimum package
15000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TI(Texas Instruments)
Electronic Component
TPD1E01B04DPLR
Electronic Component
1
Package
X2-SON-2(0.3x0.6)
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.046g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.18pF
Electronic Component
BM0256004836
Operating Temperature
40℃~+125℃
Voltage
15V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

TPD1E01B04DPLR 产品概述

TPD1E01B04DPLR 是德州仪器(TI)推出的一款小型双向静电放电(ESD)保护器件,专为高速数据线和空间受限的便携式电子设备设计。器件在极小的 X2-SON-2(0.3 × 0.6 mm)封装内实现高效浪涌抑制,兼顾低结电容和高冲击能力,是保护敏感接口(如USB、MIPI、HDMI、串行总线等)免受静电与瞬态浪涌损伤的理想选择。

一、主要特性

  • 极性:双向,支持对称正负瞬变电压的钳制;
  • 通道数:单路保护器;
  • 反向截止电压(Vrwm):3.6 V,适配低压信号域;
  • 钳位电压(Vclamp):典型 15 V(在指定脉冲条件下);
  • 峰值脉冲电流(Ipp):2.5 A @ 8/20 μs;峰值脉冲功率(Ppp):27 W @ 8/20 μs;
  • 击穿电压(Vbr):6.4 V;反向电流(Ir):10 nA(典型);
  • 结电容(Cj):0.18 pF,极低电容有利于高速信号完整性;
  • 工作温度范围:-40 ℃ 至 +125 ℃。

二、典型电性能与优势

该器件在 8/20 μs 波形下可承受 2.5 A 的脉冲电流并将钳位电压限制在约 15 V,能够有效抑制工业级瞬态(IEC 61000-4-4、4-5)与静电放电(IEC 61000-4-2)事件。低结电容(0.18 pF)使其对高频信号的影响极小,适合对信号完整性要求高的差分或单端高速线路。

三、封装与机械特性

器件采用 X2-SON-2 超小封装(0.3 × 0.6 mm),占板面积极小,适合手机、可穿戴设备、IoT 终端等空间受限场合。封装兼容自动贴装与回流焊工艺,但由于体积小,PCB 布局与焊接工艺需严格控制以保证可靠性。

四、典型应用场景

  • 手机、平板与可穿戴终端的高速数据线防护(USB、MIPI 等);
  • 工业与消费电子的接口防护(串行总线、按键/外设接口);
  • IoT 终端、无线产品的射频/数字接口保护;
  • 需要在微小封装中实现高抗冲击能力且保持信号完整性的场合。

五、使用建议与布局要点

  • 将器件尽量靠近被保护的连接器或外部接口布置,以缩短从入侵点到器件的走线长度,降低寄生电感;
  • 为获得最佳性能,保护器件的地端应通过短而粗的过孔或回流焊盘与地平面低阻连接;
  • 避免在被保护线和器件之间串联阻抗元件(除非设计为渐进限流),以免延迟钳制响应;
  • 在多层板中优先使用连续地平面并在关键位置增加地过孔以改善散热与冲击能量分流;
  • 处理与装配时仍应遵循 ESD 管理规范,尽管器件用于防护,但在生产过程中过度静电可能影响性能。

六、合规与可靠性

TPD1E01B04DPLR 符合 IEC 61000-4-2(ESD),IEC 61000-4-4(EFT),IEC 61000-4-5(浪涌)等工业标准的测试要求,具有可重复的浪涌吸收能力与长期环境稳定性。典型应用可显著提升终端对外界静电和瞬态扰动的鲁棒性,延长系统寿命并降低故障率。

制造商与型号:TI(德州仪器) TPD1E01B04DPLR。该器件适合追求小封装、高抗冲击能力且要求低电容影响的高速接口保护方案。

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