WMSIC Electronic Components

TI INA180B2IDBVR

ModelINA180B2IDBVR
PackageSOT-23-5
BrandTI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TI(Texas Instruments) INA180B2IDBVR
Type
TI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TI(Texas Instruments)
Electronic Component
INA180B2IDBVR
Electronic Component
50V/V
Electronic Component
1
Package
SOT-23-5
Electronic Component
210kHz
Electronic Component
Current Sense Amplifier
Electronic Component
0.066g
Electronic Component
1
Common Mode Voltage
200mV~26V
Features
Analog Output Interface; /;;; Filter
Electronic Component
BM0228557641
Operating Temperature
40℃~+125℃
Voltage
±26V
Amplifier
1

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

INA180B2IDBVR 产品概述

一、产品简介

INA180B2IDBVR 是德州仪器(TI)推出的一款高精度电流感应放大器,单路放大器,封装为 SOT-23-5。器件针对低电阻分流电阻(shunt)上的电压检测进行优化,具有极低的输入失调(典型 25 µV)和极小的温漂(1 µV/℃),适合对小电流或低压降进行高精度测量的场合。

二、主要性能亮点

  • 增益:50 V/V(50 倍),便于将毫伏级差分电压放大到可由 ADC 或后级模数/比较电路处理的电平。
  • 共模电压范围:200 mV ~ 26 V,器件可在高侧或低侧进行电流检测,支持宽共模范围。
  • 差分/共模抗压:差分电压与共模电压均可达 ±26 V,具有良好的瞬态耐受能力。
  • 共模抑制比(CMRR):100 dB,保证在共模存在时差分信号仍能被精确放大。
  • 输入等效噪声密度:40 nV/√Hz @1 kHz,结合 210 kHz 的带宽,可取得较好的信噪比。
  • 压摆率:2 V/µs,静态电流 Iq 约 197 µA,适合电源受限且对速度有一定要求的应用。
  • 输出驱动能力:典型 8 mA 输出电流,可直接驱动后级输入或小负载。
  • 工作电源与温度:单电源供电 2.7 V ~ 5.5 V(最大电源差 5.5 V),工作温度范围 -40 ℃ ~ +125 ℃,满足工业级应用要求。
  • 输入偏置与失调电流:输入偏置电流约 100 nA,输入失调电流 0.05 µA,有利于降低测量误差和漂移。

三、典型应用场景

  • 电机驱动、电源管理中的高侧电流检测与保护。
  • 电池管理系统(BMS)中的充放电电流监测。
  • 过流检测、能耗监测与系统诊断。
  • 精密测量前端:当被测电流较小(毫安或更低)且需要高精度、低漂移测量时尤为合适。

四、使用建议与注意事项

  • 放大器增益为 50×:例如使用 10 mΩ 分流电阻时,1 A 电流在分流电阻上产生 10 mV 差分电压,放大后输出约 0.5 V,便于后级采样。
  • 布局:将分流电阻与放大器输入端靠近布置,差分输入应做对称走线以降低共模干扰。建议在 VDD 旁近端放置 0.1 µF 陶瓷旁路电容以稳定电源。
  • 噪声与带宽权衡:器件带宽约 210 kHz,若需更低噪声可在输入端或输出端增加低通滤波来降低带宽和集成噪声。
  • 共模耐受与保护:器件支持较宽共模和差分电压,但在极端瞬态或高能量脉冲环境下应搭配钳位或限流保护电路以延长可靠性。
  • 温度漂移管理:器件 Vos TC 仅 1 µV/℃,在高精度系统中仍建议做温度补偿或校准以获得最佳长期精度。

五、封装与选型建议

  • 封装:SOT-23-5,适用于空间受限的 PCB 布局。
  • 如果要求更高的带宽、不同增益或更多通道,应查看同家族其他型号;若系统供电或工作电压不同,需确认供电兼容性与共模需求。

总结:INA180B2IDBVR 以其高 CMRR、低失调与低噪声特性,配合宽共模范围和工业温度等级,为电流检测和过流保护提供了一种小封装、低功耗且稳定的解决方案。对于需要在有限 PCB 空间内实现精确电流测量的工业与消费电子设计,INA180B2 是值得优先考虑的器件。

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