WMSIC Electronic Components

TI ESDS552DBZR

ModelESDS552DBZR
PackageSOT-23(DBZ)|3
BrandTI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TI(Texas Instruments) ESDS552DBZR
Type
TI
Minimum package
3000 未知

Technical parameters

Electronic Component
CUT TAPE
Electronic Component
TI(Texas Instruments)
Electronic Component
ESDS552DBZR
Electronic Component
1
Package
SOT-23(DBZ)|3
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.032g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
11pF
Electronic Component
BM0259551748
Operating Temperature
40℃~+125℃
Voltage
23.5V
Electronic Component
IEC 61000-4-5;IEC 61000-4-2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESDS552DBZR 双向双路ESD/浪涌保护二极管产品概述

ESDS552DBZR是德州仪器(TI)推出的一款双路双向ESD与浪涌保护二极管,专为需要多通道、低电容防护的电子电路设计,可有效抑制静电放电(ESD)和瞬态浪涌对敏感元器件的损害,同时兼顾小型化封装与宽温工作能力,适用于消费电子、通信、工业控制等多领域。

一、产品核心定位与优势

该器件的核心价值在于多通道防护与高频兼容性的平衡:

  • 双路集成设计:单封装内集成两路独立防护通道,可同时保护两路信号或电源线路,减少元器件数量与布板空间;
  • 双向极性兼容:无需区分正负极性,简化电路设计与焊接工艺,适用于无极性的信号/电源线路;
  • 低电容特性:结电容仅11pF,对高频信号(如USB 2.0、音频、低速数据总线)的传输损耗极小,不影响电路正常功能;
  • 强脉冲耐受:峰值脉冲电流达25A(8/20μs标准浪涌波形),峰值脉冲功率500W,可应对常见的静电放电与瞬态浪涌冲击。

二、关键电气参数深度解析

2.1 防护电压与钳位特性

  • 反向截止电压(Vrwm):12V,即器件在正常工作时可承受的最大反向电压,确保电路在额定电压下稳定运行;
  • 击穿电压(Vbr):18V,当瞬态电压超过该值时,器件导通并分流浪涌电流;
  • 钳位电压(Vc):23.5V,是器件导通后两端的最大电压,可将后端敏感元器件的电压限制在安全范围内,避免过压损坏。

2.2 脉冲防护能力

  • 峰值脉冲电流(Ipp):25A(8/20μs波形),符合IEC 61000-4-5浪涌测试标准,可承受典型的电源/信号线路浪涌;
  • 峰值脉冲功率(Ppp):500W(8/20μs波形),进一步验证了器件对强脉冲的耐受能力,支持多次脉冲冲击(TI同类器件通常可承受数千次ESD冲击)。

2.3 静态特性与兼容性

  • 反向漏电流(Ir):50nA(典型值),低漏电流确保器件在正常工作时不消耗额外功率,不影响电路效率;
  • 结电容(Cj):11pF,远低于传统TVS管的电容值,适合高频信号线路(如音频接口、USB数据端口),避免信号失真。

三、封装与工作环境

  • 封装形式:SOT-23(DBZ)3引脚封装,尺寸紧凑(典型封装尺寸约1.6mm×2.9mm×1.1mm),适配小型化电子设备的布板需求;
  • 工作温度范围:-40℃~+125℃,宽温特性使其可在极端环境下稳定工作,适用于工业控制、车载电子(参数支持宽温)等场景。

四、符合标准与可靠性

ESDS552DBZR严格遵循国际电磁兼容(EMC)标准:

  • IEC 61000-4-2:静电放电防护标准,可有效抑制人体/设备接触产生的ESD(接触放电±8kV、空气放电±15kV典型防护能力);
  • IEC 61000-4-5:浪涌(冲击)防护标准,覆盖电源与信号线路的瞬态浪涌防护需求。

此外,TI的生产工艺与质量管控确保器件具有高可靠性,可长期稳定工作于各类应用场景。

五、典型应用场景

该器件的多通道、低电容与强防护特性,使其适用于以下场景:

  1. 消费电子:智能手机、平板电脑、笔记本电脑的USB接口、音频接口、HDMI端口防护;
  2. 通信设备:路由器、交换机的RJ45以太网接口、射频(RF)端口防护;
  3. 工业控制:传感器输入输出接口、PLC控制线路、电机驱动电路的ESD/浪涌防护;
  4. 小型电子设备:智能穿戴、智能家居设备的信号端口防护。

总结

ESDS552DBZR作为TI旗下的双路双向ESD/浪涌保护二极管,以紧凑封装、双路集成、低电容、宽温兼容为核心优势,完美平衡了防护能力与电路兼容性,是消费电子、通信、工业等领域敏感元器件防护的理想选择,可有效提升电子设备的可靠性与抗干扰能力。

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