WMSIC Electronic Components

CUS08F30,H3F(T CUS08F30

ModelCUS08F30,H3F(T
PackageSOD-323
BrandTOSHIBA
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TOSHIBA CUS08F30, H3F(T
Type
TOSHIBA
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TOSHIBA
Electronic Component
CUS08F30,H3F(T
Electronic Component
1
Package
SOD-323
Electronic Component
Schottky Diode
Electronic Component
0g
Electronic Component
1
Electronic Component
BM0227154632
Current
800mA
Current(Ir)
50uA@30V
(Vf)
450mV@800mA
Electronic Component
Electronic Component
Electronic Component
3000
Voltage Rating(Vr)
30V
Surge Current (Ifsm)
5A

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

CUS08F30,H3F(T) 产品概述

一、产品简介

CUS08F30,H3F(T) 为东芝(TOSHIBA)出品的小信号肖特基二极管,采用SOD-323小封装,面向需要低正向压降和高速恢复的整流/保护场合。其典型正向压降为 Vf = 450 mV(在 IF = 800 mA 时),直流反向耐压 Vr = 30 V,额定整流电流 IF(连续)为 800 mA,反向漏电流 Ir ≤ 50 μA(在 Vr = 30 V 时),非重复峰值浪涌电流 Ifsm 可达 5 A,适合空间受限且强调效率与响应速度的设计。

二、主要参数要点

  • 型号:CUS08F30,H3F(T)(TOSHIBA)
  • 封装:SOD-323(小型表面贴装)
  • 正向压降:Vf = 450 mV @ IF = 800 mA
  • 额定整流电流:IF = 800 mA(连续)
  • 直流反向耐压:Vr = 30 V
  • 反向漏电流:Ir ≤ 50 μA @ Vr = 30 V
  • 非重复峰值浪涌电流:Ifsm = 5 A
  • 结构:肖特基势垒,低势垒电压、快恢复

三、典型应用

  • 开关电源与DC-DC变换器中的输出整流(中低电流场合)
  • 反并联续流(freewheeling)二极管用于功率开关器件保护
  • 电源输入反向保护、极性保护电路
  • 信号钳位、检测电路及高频整流场合

四、性能优势与限制

优势:低正向压降可降低导通损耗、提高效率;肖特基结构响应快、开关损耗小;小尺寸封装便于高密度布板。限制:SOD-323 散热能力受限,连续大电流下需注意结温;反向漏电在高温下会增大,不适用于高耐压或高漏电敏感的应用。

五、电路与热设计建议

  • 布线尽量缩短正负回路,减少寄生电阻和感抗;贴近封装设置旁路电容与磁环。
  • 若连续接近额定 IF 工作,应评估结温与PCB散热(加宽铜箔、必要时加散热垫或多个过孔)。
  • 浪涌情况(Ifsm)仅为非重复峰值,避免频繁或长时间的冲击电流。
  • 对于反向漏电敏感应用,可在实际温度下测量 Ir 并预留余量。

六、封装与焊接注意事项

遵循东芝推荐的焊接回流曲线及SMD工艺规范,避免超温/超时的氧化和翘曲。小封装在回流时易受热,应控制回流峰值与加热速率;在拆焊或手工焊接时注意局部过热可能损伤器件性能。

七、选型与替代建议

如需更高Vr或更低Vf可考虑其他肖特基型号或不同封装;若需要更强散热能力,应选用功率型封装(SOD-123、SOD-128、DO-214等)或并联多颗器件时小心电流分配和平衡。

总结:CUS08F30,H3F(T) 以低Vf、快响应与小尺寸为核心优势,适合中低功率、高密度电源及保护电路;在设计时应综合考虑热管理和反向漏电对系统的影响,以确保长期可靠性与性能稳定。

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