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1SS362FV,L3F(T 1SS362FV
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA 1SS362FV, L3F(T
- Type
- TOSHIBA
- Minimum package
- 8000
Technical parameters
- Electronic Component
- TOSHIBA
- Electronic Component
- 1SS362FV,L3F(T
- Electronic Component
- 1
- Package
- SOT-723
- Electronic Component
- Switch Diode
- Electronic Component
- 0g
- Electronic Component
- 1
- Electronic Component
- BM0265262286
- Current
- 100mA
- Diode
- 1
- Current(Ir)
- 500nA@80V
- (Vf)
- 970mV@100mA
- Power Dissipation(Pd)
- 150mW
- Electronic Component
- 8000
- Voltage Rating(Vr)
- 80V
- (Trr)
- 1.6ns
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
1SS362FV,L3F(T) — 产品概述
一、产品简介
1SS362FV,L3F(T) 是东芝推出的小信号高速开关二极管，封装为极小型 SOT-723，内部为一对串联式二极管。主要参数包括：正向压降 Vf = 970 mV（@100 mA）、直流反向耐压 Vr = 80 V、整流电流（连续）100 mA、耗散功率 Pd = 150 mW、反向电流 Ir = 500 nA（@80 V）、反向恢复时间 Trr = 1.6 ns、非重复峰值浪涌电流 Ifsm = 1 A。该器件在体积受限且要求高速开关、小信号整流或电平钳位的应用中具有明显优势。
二、关键电气特性与意义
- 正向压降 970 mV（@100 mA）：在满载条件下，每对串联输出接近 1 V 的压降，设计时应将其纳入功耗与电压预算。
- 直流反向耐压 80 V：可用于中低电压侧的反向阻断场合，适合需要较高阻断电压的信号路径。
- 反向恢复时间 1.6 ns：高速回复使其可胜任高频开关、脉冲整形及混频电路中的开关元件。
- 低反向泄漏 500 nA（@80 V）：保证在高阻断电压条件下泄漏电流极小，有利于低功耗设计和精密测量电路。
三、典型应用场景
- 高频开关与脉冲整形电路（通信收发、时钟恢复、FM/IF 前端）。
- 小信号整流及电平移位、限幅（便携仪表、传感接口）。
- 保护与钳位（防止反向电压对下游敏感器件的损坏）。
- 空间受限的消费电子与移动设备，适合表面贴装高速生产线。
四、设计与布局建议
- 考虑到 Pd = 150 mW，工作时应留有安全裕量；在接近 100 mA 连续工作情况下，器件功耗接近或超过 100 mW（Vf×If），建议在连续大电流场合降低占空比或并联器件分担。
- 高频应用中，尽量缩短走线、减小寄生电感与电容，以发挥 1.6 ns 的反向恢复优势。
- SOT-723 为微型封装，散热能力有限，需避免长期高温环境并遵循厂商回流焊工艺曲线。
五、可靠性与使用注意
- Ifsm = 1 A 为非重复峰值浪涌规格，仅限瞬态事件，避免在重复或长期冲击下使用该极限值。
- 在高温或高压工况下，应关注反向泄漏随温度上升而增加的趋势，关键测量或精密电路请保留裕量。
- 建议参考东芝原厂数据手册获取完整的热阻、最大结温和回流焊况等详细信息，按推荐的湿敏等级和储存条件处理。
总结：1SS362FV,L3F(T) 以其小体积、80 V 阻断能力与纳秒级恢复时间，适合空间受限且要求高速响应的小信号开关与整流场合。合理的电流/功耗留量与良好的 PCB 布局，是发挥该器件性能并保证长期可靠性的关键。若需替代建议或在具体电路中的等效计算，我可以根据电路条件给出更详细的设计方案。
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