WMSIC Electronic Components

SSM3K35CT,L3F(T SSM3K35CT

ModelSSM3K35CT,L3F(T
PackageCST-3
BrandTOSHIBA
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 22+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TOSHIBA SSM3K35CT, L3F(T
Type
TOSHIBA
Minimum package
10000

Technical parameters

Electronic Component
TOSHIBA
Electronic Component
SSM3K35CT,L3F(T
Electronic Component
1
Package
CST-3
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0g
Electronic Component
1
Electronic Component
BM0094332959
Power Dissipation(Pd)
100mW
Electronic Component
10000
Voltage(Vdss)
20V
Resistor(RDS(on))
20Ω@1.2V
Voltage(Vgs(th))
1V@1mA
Current(Id)
180mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SSM3K35CT, L3F(T) 产品概述

1. 产品简介 SSM3K35CT, L3F(T) 是一款由东芝(TOSHIBA)生产的 N 沟道 MOSFET,具有出色的电压和电流承受能力,适用于各类电子电路的开关和放大应用。它的最大额定功耗为 100mW,最大漏源电压为 20V,以及最大漏电流为 180mA,适合在功率相对较小的应用场景中使用。

2. 主要特点

  • 类型:N 沟道 MOSFET
  • 最大漏源电压 (V_DS): 20V
  • 最大漏电流 (I_D): 180mA
  • 功耗 (P_D): 100mW
  • 封装类型:CST3-3
  • 工作温度范围:-55°C 到 150°C
  • 输出特性:较低的开启电压和保证的击穿电压,优良的导通状态与关断特性。

这些特点使 SSMS3K35CT, L3F(T) 能够在许多不同的电路中高效工作,无论是用于开关,放大,还是作为电源管理元件。

3. 应用领域 SSM3K35CT, L3F(T) 可以广泛应用于多个领域,包括但不限于:

  • 开关电源:用于调节电流流动,从而实现高效的电源转换。
  • 信号开关:在音频和视频设备中,用于信号的选择和路由。
  • 线性稳压器:帮助稳定输出电压,确保电子设备的正常运行。
  • 继电器驱动:在逻辑控制电路中,用于控制更大功率的负载。

在这些应用中,由于其较高的耐压性能和灵敏的响应,SSM3K35CT, L3F(T) 能够极大地提高电路的可靠性和效率。

4. 性能参数

  • 静态输入阻抗 (R_G):SSM3K35CT, L3F(T) 设计有较低的输入电阻,确保快速切换,适合高频应用。
  • 开关速度:该 MOSFET 的开关速度较高,能够支持快速启停切换,有效降低了功耗。
  • 通道电阻 (R_DS(on)): 在最大允许条件下,漏源电阻非常低,能够提供理想的导通性能,减少热损失。

这些性能使得 SSM3K35CT, L3F(T) 在电子元器件的竞争中占有一席之地。

5. 设计注意事项 在使用 SSM3K35CT, L3F(T) 进行电路设计时,工程师需要考虑以下几个方面:

  • 热管理:虽然最大功耗为 100mW,但在高负载情况下,要适当设计散热措施,确保器件在安全工作区域内运行。
  • 电压和电流限制:确保不超过其最大额定电压及电流,避免损坏或故障。
  • 驱动电压:合理选择栅极驱动电压,以确保 MOSFET 的可靠导通和关断。

6. 结论 东芝出品的 SSM3K35CT, L3F(T) N 沟道 MOSFET 以其简洁的结构和优秀的性能参数,为电子工程师提供了一种理想的选择,广泛应用于开关电源、信号开关及继电器驱动等场景。通过合理的设计和应用,工程师可以最大限度地挖掘其潜力,提高电路的整体效率与可靠性。无论是低功耗的信号处理,还是对复杂电源管理的需求,SSM3K35CT, L3F(T) 都能很好地满足,并在不同的电子产品中发挥重要作用。

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