WMSIC Electronic Components

2SA2060(TE12L,F) 2SA2060

Model2SA2060(TE12L,F)
PackageTO-243AA
BrandTOSHIBA
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TOSHIBA 2SA2060(TE12L, F)
Type
TOSHIBA
Minimum package
1000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TOSHIBA
Electronic Component
2SA2060(TE12L,F)
Electronic Component
1
Package
TO-243AA
Electronic Component
Transistor(BJT)
Electronic Component
0g
Electronic Component
1
Electronic Component
BM0230127117
Type
Surface Mount
Operating Temperature
150°C(TJ)
Package / Housing
TO-243AA
Transistor Type
PNP
Power
1W
Electronic Component
Electronic Component
Electronic Component
1000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SA2060(TE12L,F) SOT-89(SC-62)产品概述

一、产品简介

2SA2060 是东芝(TOSHIBA)推出的一款表面贴装型 PNP 三极管,封装为 TO-243AA(供应商封装标识 PW-MINI,常见外形为 SOT-89/SC-62)。器件定位于低功耗开关与小功率放大场合,具有较高的直流电流增益和较低的饱和压降,适合用作高端侧驱动、音频输出级及一般功率放大/开关电路中的 PNP 器件选择。

二、主要电气参数(摘要)

  • 晶体管类型:PNP
  • 集电极电流 Ic(最大):2 A
  • 集–射极击穿电压 VCEO(最大):50 V
  • 饱和压降 VCE(sat)(最大):200 mV(在不同 Ib、Ic 条件下的数据表给出参考值,如 33 mA 与 1 A 测试点)
  • 集电极截止电流 ICBO(最大):100 nA
  • 直流电流增益 hFE(最小):200(测试条件 Ic = 300 mA,VCE = 2 V)
  • 最大耗散功率 Pd(封装限制):1 W
  • 结温 TJ(最大):150 °C

三、性能亮点

  • 高增益:在中等偏流(如 300 mA)下 hFE 最小值可达 200,有利于减小基极驱动电流,提高驱动效率。
  • 低饱和压降:在典型驱动点饱和压降较低,可降低导通损耗并减小发热。
  • 低漏电流:ICBO 典型值 ≤100 nA,有利于提高电路静态精度与待机性能。
  • 紧凑封装:SOT-89(PW-MINI)体积小,便于表面贴装和自动化加工。

四、典型应用场景

  • 高端侧小电流开关与驱动电路(例如作为高端侧开关或回路保护元件)
  • 便携式或板上音频放大输出级(小功率输出)
  • 线性调节器中的旁路/功率取样元件与小功率稳压电路
  • 一般功率放大、驱动继电器/小型执行器的前级

五、封装与散热建议

  • 封装为 SOT-89(TO-243AA,PW-MINI),热阻较塑封小功率器件高,器件最大耗散功率约 1 W,实际使用时应考虑 PCB 散热:在器件底部和引脚附近布局较大铜箔面积,必要时使用多层过孔连接到内层/底层散热地。
  • 在高电流或连续导通场合,应进行热仿真或测量,注意结-焊盘温度和环境温度对允许耗散的影响,并遵循厂商的热降额曲线。
  • 焊接工艺遵循 SMD 常规回流温度曲线,避免超温或长时间高温导致器件应力。

六、选型与替代建议

  • 若需要更高功率耗散或更低热阻,可考虑更大封装(如 SOT-223、TO-220)或使用外部散热片的同类 PNP 器件。
  • 若设计要求更高击穿电压或更大电流,应参考厂商器件家族中的高压/大电流型号。
  • 选型时应参考完整数据手册的典型特性曲线(hFE vs Ic、VCE(sat) vs Ic/Ib、热阻等)以确定基极驱动、电流和功耗边界。

结语:2SA2060 在空间受限且需中等电流放大或高端侧驱动的应用中表现平衡。建议在最终设计前查阅东芝官方数据手册以确认全部极限参数与典型行为,并根据 PCB 布局做好散热与驱动匹配。

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