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2SC5712(TE12L,F) 2SC5712
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA 2SC5712(TE12L, F)
- Type
- TOSHIBA
- Minimum package
- 1000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TOSHIBA
- Electronic Component
- 2SC5712(TE12L,F)
- Electronic Component
- 1
- Package
- SOT-89
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.12g
- Electronic Component
- 1
- Electronic Component
- BM0257153557
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Power Dissipation(Pd)
- 1W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Collector Current(Ic)
- 3A
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2SC5712 (TE12L,F) 产品概述
一、概述
2SC5712 是东芝（TOSHIBA）推出的一款 NPN 三极管，封装为 SOT-89，适用于小功率开关与一般放大应用。器件额定集电极电流达 3A，集射极击穿电压为 50V，耗散功率为 1W，面向对增益和低饱和压有要求的电路设计。
二、主要电气参数
- 晶体管类型：NPN
- 集电极电流 Ic：3A（最大）
- 集射极击穿电压 Vceo：50V
- 耗散功率 Pd：1W（封装热限制，应按环境及 PCB 布局降额使用）
- 直流电流增益 hFE：400（条件：Ic=0.3A，Vce=2V）
- 集电极截止电流 Icbo：100nA（典型条件）
- 集电极饱和电压 VCE(sat)：140mV（典型）
- 射基极击穿电压 Vebo：7V
- 工作温度范围：-55℃ ～ +150℃
三、优势与适用场景
凭借高增益（hFE≈400）和较低饱和压（VCE(sat)≈140mV），2SC5712 适合用作：
- 低压大电流开关或驱动级（如小马达驱动、继电器驱动）
- 前置放大器或电平转换器，需小信号放大且负载能力较好时
- 电池供电设备中的功率放大及缓冲级
四、热管理与封装注意
SOT-89 封装的耗散功率受 PCB 散热面积影响明显。Pd=1W 是在特定散热条件下的额定值，实际应用中应考虑环境温度与铜箔面积进行降额设计。推荐使用较大铜箔或热铺铜并避免长时间在额定功率附近工作以延长可靠性。
五、使用建议与保护
- 禁止超过 Vceo=50V 与 Vebo=7V 的极限值，以免造成结破坏。
- 注意高温下 Icbo 会增加，对偏置电路有影响，需考虑温漂与基极泄漏。
- 若作低饱和开关使用，建议设计足够的基极驱动电流以确保 VCE(sat) 达到指标。
- 在并联或作为大电流路径时注意均流与热耦合问题。
六、典型电路参考（概念）
可作为低侧开关（集电极至负载），或作发射跟随器提供低阻抗驱动；在需要高增益的小信号放大级可配合适当偏置网络使用。对保护可并联肖特基二极管或 RC 抑制以应对感性负载反冲。
七、封装与订购信息
型号：2SC5712 (TE12L,F)；品牌：TOSHIBA；封装：SOT-89。订购与生产应用请参照东芝官方数据手册与推荐的 PCB 布局及焊接工艺规范，以确保性能与可靠性。
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