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TPH1400ANH,L1Q(M TPH1400ANH
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA TPH1400ANH, L1Q(M
- Type
- TOSHIBA
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TOSHIBA
- Electronic Component
- TPH1400ANH,L1Q(M
- Electronic Component
- 1
- Package
- SOP-8-EP-5.0mm
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.257g
- Electronic Component
- 1
- Electronic Component
- BM0220651160
- Power Dissipation(Pd)
- 48W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 100V
- Capacitor(Ciss)
- 1.9nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
TPH1400ANH,L1Q(M) 产品概述
一、产品简介
TPH1400ANH,L1Q(M) 是一款来自东芝（TOSHIBA）的N沟道功率MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor），可广泛应用于电源管理、开关电源、驱动电路等多种电子设备中。该器件具有60V至150V的漏源极耐压范围，尤其适合高效率的功率转换和电压控制等应用场景。
二、技术特点
高耐压特性：TPH1400ANH,L1Q(M) 的漏源极耐压VDSS应用范围为60V到150V，使其适合高压环境下运行，满足现代电源管理系统的严格要求。
低开启电压(VGS)特性：该器件的图型结构设计极大地降低了开启电压，从而可以在较低的电压下快速开启，提高了电路的响应速度。
优良的导通电阻(RDS(ON))：其在导通态下的低阻抗特性极大地减小了功耗，增强了电能传输效率，适合用于高频开关应用。
SOP-8-EP-5.0mm 封装：该元件采用极小的SOP-8-EP封装（5.0mm），不仅确保了良好的散热性能，还为PCB设计提供了灵活性，这对于空间有限的设计尤其重要。
出色的热管理特性：由于MOSFET的热阻和热容量特性表现良好，TPH1400ANH,L1Q(M)在高功率运行时能够有效管理热量，防止过热，提高了整体可靠性。
三、应用领域
TPH1400ANH,L1Q(M) 作为高性能的功率MOSFET，可广泛应用于多个领域，包括但不限于：
开关电源：由于其优良的开关特性和低导通电阻，此MOSFET特别适合在开关电源设计中应用，能够提升整体电源效率和稳定性。
电动工具：在电动工具的驱动电路中，TPH1400ANH,L1Q(M)可用于快速开关控制，提高设备的响应速度和功率效率。
家用电器：在如空调、冰箱等家用电器中，此MOSFET可以作为电源管理，提高能效。
LED驱动电路：TPH1400ANH,L1Q(M)的高效能使其在LED驱动电路中应用十分理想，尤其是在需要调节亮度的方案中。
汽车电子：在汽车电子设备需要高效能和可靠性时，这款MOSFET可用于DC-DC转化器、电池管理系统等。
四、结论
TPH1400ANH,L1Q(M) 作为东芝旗下的一款功能强大的N沟道功率MOSFET，凭借其高耐压、低导通电阻及小型封装优势，具有极强的市场竞争力。其广泛的应用前景使其成为不少高科技产品中的关键组件。针对现代电子市场对高效率、低能耗和紧凑设计的需求，TPH1400ANH,L1Q(M) 绝对是一个理想选择，能帮助工程师实现产品性能的最大化。
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