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TK7A90E,S4X(S TK7A90E
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA TK7A90E, S4X(S
- Type
- TOSHIBA
- Minimum package
- 2500
Technical parameters
- Electronic Component
- TOSHIBA
- Electronic Component
- TK7A90E,S4X(S
- Electronic Component
- 1
- Package
- TO-220SIS
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 2.751g
- Electronic Component
- 1
- Electronic Component
- BM0231142819
- Power Dissipation(Pd)
- 45W
- Electronic Component
- 2500
- Voltage(Vdss)
- 900V
- Capacitor(Ciss)
- 1.35nF
- Output Capacitor(Coss)
- 110pF
- Gate (Qg)
- 32nC@10V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
TK7A90E,S4X(S — 产品概述
一、概述
TK7A90E,S4X(S 是东芝（TOSHIBA）推出的一款高压 N 沟道功率 MOSFET，额定漏源电压达 900V，适用于中小功率高压开关场合。器件采用 TO-220SIS 封装，便于安装与散热处理，适合需要高耐压与可靠开关特性的工业与消费类电源设计。
二、主要性能与规格
- 类型：N 沟道 MOSFET（功率开关）
- 漏源电压 Vdss：900V
- 连续漏极电流 Id（Tc 参考值）：7A
- 导通电阻 RDS(on)：1.6Ω @ Vgs=10V（测量电流 3.5A 条件）
- 阈值电压 Vgs(th)：2.5V（典型）
- 总门极电荷 Qg：32nC @ Vgs=10V
- 输入电容 Ciss：1.35nF；输出电容 Coss：110pF；反向传输电容 Crss（Miller）：10pF
- 功耗 Pd：45W（在适当散热条件下）
- 封装：TO-220SIS
三、电气特性与驱动要点
该器件以高耐压为主要卖点，RDS(on) 相对较高，因此更适合在高压、较低频率或脉冲工作下使用，而不是做低压大电流的低损耗开关。门极阈值约 2.5V 表明需要较高的 Vgs（典型 10V）才能达到标称 RDS(on)。门极电荷 Qg=32nC 表明在快速开关时对门极驱动电流要求较高，若希望减少开关损耗，应配备能提供充放电电流的驱动器或限制开关速度以降低瞬时损耗。较小的 Crss（10pF）在避免 Miller 效应方面有利，有助于改善栅源耦合下的误开关情况。
四、热管理与功率限制
器件额定耗散功率 45W（在指定散热条件下）意味着需要恰当的散热设计。TO-220SIS 封装利于与散热片或机箱散热结合，但在高电流或持续开通状态下仍需计算结到环境的热阻并设计合适散热器。由于 RDS(on) 相对偏大，导通损耗（I^2·RDS(on)）在高电流情况下上升迅速，应避免在大电流持续导通工况下长时间使用，或采用并联/更低 RDS(on) 的器件替代。
五、典型应用场景
- 高压开关电源（如离线开关、反激/正激功率级）
- 灯具镇流器与电子镇流应用
- 工业控制与保护电路中的高压开关元件
- 需要高耐压但中等电流的开关场合（例如若干类型的电源前级或中间级）
六、选型建议
若设计重点是承受高电压且开关频率不极高，TK7A90E 是性价比较高的选择；若需在高电流、低导通损耗或高开关频率条件下工作，应考虑导通电阻更低或门极电荷更小的替代型号。同时设计时应重点考虑门极驱动能力与散热方案，确保器件在安全工作区（SOA）内运行。
如需我根据具体电路（工作电压、频率、负载电流、散热条件）帮您做更精确的损耗和散热计算，可提供电路参数，我来协助评估。
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