Model & package intelligence
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2SK209-Y(TE85L,F) 2SK209
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA 2SK209-Y(TE85L, F)
- Type
- TOSHIBA
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TOSHIBA
- Electronic Component
- 2SK209-Y(TE85L,F)
- Electronic Component
- 1
- Package
- SOT-346
- Electronic Component
- MOSFET(JFET)
- Electronic Component
- 0.037g
- FETType
- N
- Electronic Component
- 1
- Electronic Component
- BM0228736740
- Power Dissipation(Pd)
- 150mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Current(Idss)
- 14mA
- Capacitor(Ciss)
- 13pF
- Capacitor(Crss)
- 3pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2SK209-Y (TE85L,F) 产品概述
一、产品概况
2SK209-Y 为东芝（TOSHIBA）出品的小功率 N 沟道场效应晶体管，针对射频与小信号放大场合优化。器件额定漏源电压 Vdss 为 50V，允许耗散功率 Pd 为 150mW，适合低功耗、低噪声前端电路和增益级应用。封装为紧凑型 SOT-346，便于高密度 PCB 布局与表面贴装工艺。
二、主要性能
- 器件类型：N 沟道（适用于射频/小信号处理）
- 最大漏源电压：50V（Vdss）
- 最大耗散功率：150mW（Pd）
- 小信号测试示例：在 10V 偏压与 1kHz 信号条件下，典型漏极电流约 500µA（测试条件仅供参考，具体以元件数据手册为准）
- 优势：输入阻抗高、噪声低、线性度好，适合前置放大与缓冲电路。
三、电气参数与特性说明
2SK209-Y 设计用于小信号放大，低静态电流与低功耗特性使其在便携与恒流受限电路中表现良好。器件在射频范围内保持稳定的增益与相位响应，适配 VHF/UHF 以及中频级放大场景。请在设计时注意不超过 Vdss 与 Pd 极限，并留有热裕度。
四、封装与引脚
封装：SOT-346（小型表贴），便于自动贴装与回流焊工艺。
封装优势：占板面积小、寄生电感电容低，有利于射频性能表现。实际引脚排列与焊盘尺寸请参照东芝官方封装资料以确保焊接可靠性与热传导设计。
五、典型应用
- 射频前置放大器（VHF/UHF）
- 音频低噪声放大器与缓冲级
- 混频器输入级与本振缓冲
- 传感器接口、微功耗放大电路
六、设计与布局建议
- 布局：尽量缩短信号走线，靠近器件放置输入/输出去耦电容，减少寄生电感。
- 偏置：采用稳定的偏置源，避免过度偏流导致发热；在功耗接近 Pd 时需加散热裕度。
- EM 抗扰：射频应用中加入合适的屏蔽与接地环，保证接地回路面积最小化。
- 焊接：遵循 SOT-346 的推荐回流曲线，避免过度热冲击影响可靠性。
七、注意事项与可靠性提示
- 防静电：器件为敏感半导体元件，装配与测试时须采取 ESD 防护措施。
- 工作极限：切勿超过 Vdss 与 Pd 标称值，长期在额定功耗附近工作会降低寿命。
- 验证：在最终电路中进行温升、线性度与噪声测试，确认在目标频率与温度范围内满足性能要求。
总结：2SK209-Y (TE85L,F) 提供了在小功耗条件下优秀的射频与小信号放大能力，适用于对空间与功耗要求严格的电子系统。选型与设计时请结合东芝官方数据手册进行详细参数核对与热设计。
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