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SSM6N15AFU,LF SSM6N15AFU
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA SSM6N15AFU, LF
- Type
- TOSHIBA
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TOSHIBA
- Electronic Component
- SSM6N15AFU,LF
- Electronic Component
- 1
- Package
- SC-88
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.018g
- Electronic Component
- 1
- Electronic Component
- BM0230027869
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 13.5pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SSM6N15AFU,LF 产品概述
一、基本特性
SSM6N15AFU,LF 为东芝（TOSHIBA）推出的 N 沟道 MOSFET，采用 SC-88 小封装，器件为双路 N 沟道设计，适合低功耗、小尺寸应用。器件的主要电气参数包括：最大漏源电压 Vdss = 30V，连续漏极电流 Id = 100mA，最大耗散功率 Pd = 300mW。门极阈值电压 Vgs(th) 约为 1.5V。
二、关键参数解析
- 导通电阻：RDS(on) = 2.3Ω（Vgs = 4V），3.5Ω（Vgs = 2.5V）。在 4V 门压时导通损耗显著降低，2.5V 为较弱的逻辑电平驱动条件下仍能导通，但损耗增加。
- 容性参数：输入电容 Ciss = 13.5pF，输出电容 Coss = 8pF，反向传输电容 Crss = 6.5pF。总的电容值较小，有利于快速开关和较低的栅极驱动能量。
- 热性能：Pd = 300mW（在规定测试条件下），封装热阻较大，建议在 PCB 设计中通过铜箔散热和合理排列降低结温。
三、典型应用场景
- 低电流开关与电子负载控制：适用于小功率继电器驱动、信号级开关、传感器电源断开等场合；最大连续电流 100mA，宜用于小电流场合。
- 电池供电设备与便携式产品：低电容与小体积有利于快速切换、降低静态功耗，适合移动设备中的负载隔离与电源管理。
- 接口电平转换与保护电路：由于 30V 的耐压能力，可用于较高工况下的低功率电平转换与反向保护。
四、封装与热管理
SC-88 小型封装便于高密度布局，但散热能力有限。实际使用时建议：
- 在 PCB 上为器件底部及引脚附近布置足够的铜面积以扩散热量；
- 评估工作点的功耗（P = I^2 × RDS(on) 或 Vds × Id），确保在最高环境温度下器件结温不超过规格；
- 对长期大电流脉冲或持续较高功耗场景，考虑改用更大功率器件或分担热流。
五、选型与使用建议
- 若系统栅极驱动能达到 4V 或更高，器件的导通损耗可显著降低，优先选择在 4V 条件下工作；若仅有 2.5V 驱动，应注意增大的 RDS(on) 带来的功耗。
- 注意 Vgs(th) = 1.5V 是阈值电压，非“充分导通”的门压，应保证有效门压高于该值若干以获得稳定低阻态。
- 开关应用中，得益于较小的 Ciss/Crss，器件切换速度快且栅极能量低，但须防止快速边沿导致的电磁干扰与振铃，必要时加入阻尼或栅极电阻。
- 对于需要更高电流或更低导通阻抗的场合，建议选择额定电流和 Pd 更高的 MOSFET；若在同一板上并联使用小封装 MOSFET，应谨慎考虑不均流与热迁移问题。
总结：SSM6N15AFU,LF 以其 30V 耐压、低电容和小封装体积，适合低功耗、小信号开关与便携式电子的电源与信号控制场景。合理的栅极驱动与 PCB 热设计是发挥器件性能与保证可靠性的关键。
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