WMSIC Electronic Components

2SC4117-GR(TE85L,F 2SC4117

Model2SC4117-GR(TE85L,F
PackageSOT-323-3
BrandTOSHIBA
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 22+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TOSHIBA 2SC4117-GR(TE85L, F
Type
TOSHIBA
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TOSHIBA
Electronic Component
2SC4117-GR(TE85L,F
Electronic Component
1
Package
SOT-323-3
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.027g
Electronic Component
1
Electronic Component
BM0265124312
Transistor Type
NPN
Frequency(f T)
100MHz
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
100mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

东芝2SC4117-GR NPN型三极管产品概述

一、产品基本信息

2SC4117-GR(TE85L,F)是东芝(TOSHIBA)推出的NPN型双极结型晶体管(BJT),单只封装,采用SOT-323-3小型表面贴装形式,属于小功率三极管范畴,主要面向小信号放大、低功耗开关等场景,兼具高增益与紧凑设计优势。

二、核心电性能参数详解

该器件的参数覆盖极限工作边界、直流特性及高频能力,具体如下:

2.1 极限参数(安全工作范围)

极限参数是器件允许的最大承载范围,超出可能导致损坏:

  • 集射极击穿电压(Vceo):120V(基极开路时,集电极-发射极反向耐压),保证中等电压场景可靠性;
  • 射基极击穿电压(Vebo):5V(基极-发射极反向耐压),设计需注意基极偏置不超限;
  • 集电极截止电流(Icbo):100nA(典型值),基极开路时的漏电流极小,截止状态功耗低;
  • 耗散功率(Pd):200mW(常温下最大总功耗),需结合工作电流/电压控制;
  • 集电极电流(Ic):100mA(最大直流集电极电流),反映功率承载能力。

2.2 直流特性参数(工作性能核心)

直接影响放大与开关功能:

  • 直流电流增益(hFE):Ic=2mA、Vce=6V时达700,属于高增益三极管,对微弱信号放大能力强;
  • 集射极饱和电压(VCE(sat)):Ic=10mA、Ib=1mA时仅300mV,饱和导通损耗极低,适合低功耗开关。

2.3 高频特性参数

  • 特征频率(fT):100MHz(共发射极电流增益降为1时的频率),可满足中等频率(如几十MHz)小信号放大需求。

三、封装形式与物理特性

采用SOT-323-3超小型封装,常规尺寸约1.6mm×1.0mm×0.6mm,3引脚布局(通常1脚=基极B、2脚=发射极E、3脚=集电极C)符合行业规范,支持自动化贴装,适配高密度PCB设计,尤其适合便携式设备的小型化需求。

四、典型应用场景

结合参数特性,该器件适用于以下场景:

  1. 小信号放大:传感器(温度/压力)输出放大、音频前置放大,利用高hFE提升微弱信号强度;
  2. 低功耗开关:LED驱动、小型继电器控制、按键扫描电路,依赖低饱和压降降低开关损耗;
  3. 中等频率射频:FM频段(88-108MHz)小信号放大、无线收发模块前置放大,适配100MHz特征频率;
  4. 便携式设备:智能手机、蓝牙耳机、智能手环等内部控制电路,借助紧凑封装实现设备轻量化。

五、关键特性总结

  • 性能平衡:高增益(hFE=700)+ 低饱和压降(300mV),兼顾放大与开关需求;
  • 可靠性:120V耐压、100nA低漏电流,工作状态稳定;
  • 小型化:SOT-323封装适配高密度设计,满足便携设备趋势;
  • 品质可靠:东芝大厂工艺,一致性好,适合批量应用。

该器件以高性价比、紧凑设计及均衡性能,成为小信号电路设计的常用选型之一。

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