WMSIC Electronic Components

1SS382(TE85L,F) 1SS382

Model1SS382(TE85L,F)
PackageSC-82
BrandTOSHIBA
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 22+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TOSHIBA 1SS382(TE85L, F)
Type
TOSHIBA
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TOSHIBA
Electronic Component
1SS382(TE85L,F)
Electronic Component
1
Package
SC-82
Electronic Component
Schottky Diode
Electronic Component
0.013g
Electronic Component
1
Electronic Component
BM0265582501
Current
100mA
Diode
2
Current(Ir)
500nA@80V
(Vf)
1.2V@100mA
Electronic Component
Electronic Component
Electronic Component
3000
Voltage Rating(Vr)
80V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

东芝1SS382(TE85L,F)肖特基二极管产品概述

一、产品基本定位

1SS382(TE85L,F)是东芝半导体推出的双独立式肖特基势垒二极管,采用SOT-343小型表面贴装封装,主打小功率、低功耗、高频响应的应用场景。作为肖特基器件家族的一员,它继承了核心优势——快速开关特性与低正向压降,同时通过双管集成设计,满足高密度电路中对多二极管的需求,常见于便携式电子、小型电源管理等领域。

二、核心电气参数详解

理解1SS382的适用范围,需重点关注以下关键参数:

1. 正向导通特性

  • 正向压降(Vf):1.2V@100mA
    当通过100mA直流电流时,二极管两端导通电压仅为1.2V(肖特基二极管通常正向压降低于普通硅二极管,适合低电压电路减少功耗损耗)。
  • 整流电流(IF):100mA
    持续工作时允许的最大直流电流,明确其小功率应用定位(不适合大电流整流)。

2. 反向阻断特性

  • 直流反向耐压(VR):80V
    持续施加反向电压的最大允许值,超过可能导致反向击穿,设计需留20%~30%裕量(建议不超64V)。
  • 反向漏电流(Ir):500nA@80V
    施加80V反向电压时,漏电流仅500纳安(极微小),反向阻断性能优异,适合对漏电流敏感的低功耗电路。

3. 浪涌耐受能力

  • 非重复峰值浪涌电流(IFSM):2A
    单次毫秒级脉冲下允许的最大峰值电流,可应对启动瞬间浪涌,但不能长期重复承受。

三、封装与物理特性

1SS382采用SOT-343封装(4引脚双二极管设计),核心特点:

  • 尺寸小巧:典型尺寸1.6mm×1.6mm×0.8mm,重量<0.1g,适配便携式设备高密度PCB;
  • 表面贴装:支持回流焊工艺,便于自动化生产;
  • 灵活配置:4引脚集成2个独立二极管,可灵活实现共阴极、共阳极或独立使用。

四、主要应用场景

结合参数与封装,1SS382典型应用集中在小功率、低电压、高频响应领域:

1. 便携式电子电源管理

  • 手机、蓝牙耳机的辅助电源整流:低正向压降减少电池功耗,延长续航;
  • 电源路径切换:作为低功耗开关二极管,实现充电/放电路径切换。

2. 小型DC-DC转换电路

  • 升压/降压电路续流二极管:快速开关减少损耗,提升转换效率;
  • LDO辅助元件:降低压降损耗,优化输出电压精度。

3. 高频信号处理

  • 射频信号检波:GHz级高频响应适合无线耳机等低功率射频检波;
  • 高速逻辑钳位:快速开关防止信号过冲。

4. 小型家电与工业控制

  • 智能家居传感器电源整流;
  • 低功耗电路反向保护(防止反向接电损坏)。

五、设计注意事项

确保稳定工作需注意:

  1. 反向耐压裕量:实际反向电压不超64V;
  2. 浪涌保护:频繁浪涌需加TVS管;
  3. 温度范围:适配-55℃~125℃常规环境;
  4. 焊接工艺:回流焊峰值温度≤260℃,时间≤30s,避免热损伤。

六、产品优势总结

1SS382相比同功率硅二极管,核心优势:

  • 低功耗:低压降+低漏电流减少双向损耗;
  • 高频响应:无反向恢复时间,适合高频电路;
  • 集成化:双管集成减少PCB占用,降低物料成本;
  • 可靠性:东芝工艺保障,适配消费级与工业级应用。

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