WMSIC Electronic Components

2SA1162-Y(TE85L,F) 2SA1162

Model2SA1162-Y(TE85L,F)
PackageSOT-346
BrandTOSHIBA
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 23+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TOSHIBA 2SA1162-Y(TE85L, F)
Type
TOSHIBA
Minimum package
3000 未知

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TOSHIBA
Electronic Component
2SA1162-Y(TE85L,F)
Electronic Component
1
Package
SOT-346
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0258553242
Operating Temperature
55℃~+150℃
Transistor Type
PNP
Frequency(f T)
80MHz
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SA1162-Y(TE85L,F) 产品概述

一、概述

2SA1162-Y(TE85L,F) 为东芝(TOSHIBA)出品的小功率PNP硅晶体管,采用紧凑的SOT-346封装,面向便携式电子设备与一般小信号放大/开关场合。此器件在保证低电流泄露和较高频率响应的同时,具备良好的线性放大特性和低饱和压降,适合对空间与功耗有严格限制的应用。

二、主要特性(关键参数)

  • 晶体管类型:PNP
  • 最大集电极电流 Ic:150 mA
  • 集射极击穿电压 Vceo:50 V
  • 耗散功率 Pd:200 mW(封装限值,工作时需按温度降额)
  • 直流电流增益 hFE:70 (测量条件 2 mA、6 V)
  • 特征频率 fT:80 MHz(适用于高频小信号放大)
  • 集电极截止电流 Icbo:100 nA(低漏电流,有利于高阻电路稳定)
  • 集电极饱和电压 VCE(sat):约100 mV(在规定测试电流下,表现出低饱和电压)
  • 工作温度范围:-55 ℃ ~ +150 ℃

三、性能与优势

  • 高频性能:fT=80 MHz 支持中高频放大,适用于RF前级、视频或高速模拟信号链的设计。
  • 低漏电流与低VCE(sat):Icbo小(100 nA)与低饱和电压(~100 mV)有助于降低静态功耗并提高开关效率。
  • 紧凑封装:SOT-346 占板面积小,便于高密度布局与便携设备使用。
  • 宽温度范围:-55℃至+150℃适用于工业级或高温环境下的应用,但功耗需随环境温度降额。

四、典型应用

  • 小信号放大器与前置放大(音频/视频小信号)
  • 低功耗开关电路与电源管理的驱动/接口电路
  • 无线通信中的中低频放大单元
  • 便携式、手持及消费类电子产品中替代通用PNP晶体管

五、设计与使用建议

  • 功耗管理:Pd 仅 200 mW,PCB布线应考虑散热与热阻,必要时采用散热铜箔扩大散热面积,并按原厂数据手册进行温度降额计算。
  • 偏置与线性区工作:高增益 hFE 在低电流工况下表现良好,适合小信号放大;若用于开关,应确认在规定测试电流下的VCE(sat)与驱动电平匹配。
  • ESD 与装配:SOT-346为小型封装,装配与回流焊时应遵循制造商的温度曲线及静电防护规范,以免损伤晶体管。
  • 引脚与布局:SOT-346 封装引脚尺寸与脚位排列影响寄生电阻/电感,射频设计时应缩短引线并做好接地处理。

六、结论

2SA1162-Y(TE85L,F) 是一款面向通用小信号放大与低功耗开关的PNP晶体管,兼顾频率响应与低漏电特性,适用于空间受限且需良好线性与低损耗的电子系统。为确保可靠性,请在设计中重视功耗降额、热管理及封装布局,并参照东芝原厂规格书完成详细参数验证与应用确认。

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