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2SK2145-GR(TE85L,F 2SK2145
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TOSHIBA 2SK2145-GR(TE85L, F
- Type
- TOSHIBA
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TOSHIBA
- Electronic Component
- 2SK2145-GR(TE85L,F
- Electronic Component
- 1
- Package
- SOT-23-5
- Electronic Component
- Audio Power Amplifier
- Electronic Component
- 0.124g
- Electronic Component
- 1
- FET Type
- 2 N
- Electronic Component
- BM0230495863
- Type
- Surface Mount
- Operating Temperature
- 125°C（TJ）
- Package / Housing
- SC-74A，SOT-753
- Power
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2SK2145-GR (TE85L,F) 产品概述
一、概述与主要特点
2SK2145-GR 是东芝出品的双通道 N 沟结型场效应管（JFET），为表面贴装小信号器件。器件特点包括低漏极静态电流、极低的截止门压以及小输入电容，适合要求低噪声、低失真和高输入阻抗的模拟前端电路。封装采用 SOT-23-5 / SC-74A（供应商封装 SMV），便于自动贴装与空间受限的板级设计。
二、关键电气参数
- FET 类型：双 N-沟结型（2 in）
- 漏极静态电流 Idss：2.6 mA @ Vds = 10 V（典型/参考值）
- 截止电压 VGS(off)：200 mV @ Ig = 100 nA（极低的关断门压）
- 输入电容 Ciss（最大）：13 pF @ Vds = 10 V（低电容，有利于高频响应）
- 最大耗散功率：300 mW
- 结温 TJ：最高 125°C
以上参数在电路设计时应结合器件的公差与工作点进行确认，尤其是 Idss 与 VGS(off) 的分布会影响偏置与匹配性能。
三、典型应用
- 差分/输入级：双通道结构便于构建匹配的差分对，用于放大器或比较器输入级。
- 音频前置放大：低噪声与高输入阻抗适合拾音器与前置放大器。
- 模拟开关与多路复用：低 Ciss 与快速响应利于高带宽信号的切换。
- 精密偏置与电流源电路：JFET 特性便于构建简单的恒流源与偏置网络。
四、设计与使用建议
- 偏置设计：由于 Idss 与 VGS(off) 受个体差异影响，差分或恒定偏置电路能改善匹配与温漂表现。
- 功率与散热：最大耗散 300 mW，SOT-23-5 封装散热有限，注意降低器件温升并留出安全裕度。
- PCB 布局：输入引脚尽量缩短走线并加地屏蔽以降低寄生电容与杂散噪声。
- 静电防护：JFET 对静电敏感，装配与测试过程应采取 ESD 保护措施。
五、封装与可靠性
器件为表面贴装型（SOT-23-5 / SC-74A），适配主流贴片工艺，供应商标识为 SMV。工作结温可达 125°C，但长期可靠性建议在较低温度和合理功耗下运行，以延长寿命并减少漂移。采购时请核实具体批次的参数分布与管脚定义，必要时索取完整数据手册以确认典型值与测试条件。
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