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2SK879-Y(TE85L,F)是一款由东芝(TOSHIBA)制造的高性能N沟道场效应晶体管(JFET),专门设计用于高频及小信号处理电路。其封装形式为SC-70和SOT-323,具有优异的电气性能和小巧的尺寸,使其非常适合表面贴装(SMD)应用。2SK879-Y的工作电流和电压特性使其成为信号放大、开关和其他各种小信号处理应用的理想选择。
2SK879-Y在各种工作环境下具备卓越的性能。其在不同的Vds(漏源电压)条件下,Vgs(栅源电压)为0时,可以提供最大漏电流Idss为1.2mA。这使其在低电压条件下能够有效操作,适合于对电源电压敏感的应用。同时,截止电压VGS off为400mV,保证了器件在极低栅源电压下的可靠关闭能力,避免了误动作。
该晶体管的输入电容Ciss高达8.2pF,这个特性表明其在高频信号处理中的表现相当出色。低输入电容有利于提高频带宽度,使得该JFET在高频电路中应用更加灵活,能够处理更迅速的信号变化。
2SK879-Y的最大功率为100mW,适合多种小功率应用。其最大工作温度达125°C(TJ),使得该器件能够在相对较高的环境温度下正常运行,提供了较好的散热能力。这对于高温环境中的电子设备尤为重要,如汽车电子或工业自动化设备。
由于其独特的高性能特性,2SK879-Y可应用于多种领域,包括:
2SK879-Y的表面贴装型设计,使得其非常适合现代电子设备的紧凑内部布局。正确的安装和焊接技术可以确保其最佳性能,同时提高设备的可靠性。建议在装配过程中遵循相应的行业标准,以避免任何潜在的焊接缺陷。
2SK879-Y(TE85L,F)是一个具有高性价比的N沟道JFET,它集合了小尺寸、低功耗及优异的电气性能,能够满足广泛的应用需求。作为东芝公司推出的重要产品,它在高频小信号处理和高温环境下具有极大的应用潜力。无论是在消费电子、通信模块还是工业控制设备中,2SK879-Y都将是一款值得信赖的选择。
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Product sourcing intelligence
WMSIC turns product data, package visuals, BOM context, and sourcing signals into practical RFQ notes for buyers.
Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
BOM lines are compared by package, parameters, quantity, and workable alternatives for cleaner sourcing decisions.
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The buyer shares the full part number, package requirement, quantity, destination, and available product photos so the quotation can record the exact version under review.
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The request connects the previously used model, current demand, package evidence, target timing, and replenishment sourcing route.
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