WMSIC Electronic Components

TLP2105(TP,F) TLP2105

ModelTLP2105(TP,F)
Package8-SO
BrandTOSHIBA
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 23+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TOSHIBA TLP2105(TP, F)
Type
TOSHIBA
Minimum package
2500 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TOSHIBA
Electronic Component
TLP2105(TP,F)
Electronic Component
1
Package
8-SO
Electronic Component
Logic Output Optocoupler
Electronic Component
0.155g
Electronic Component
1
Channel Count
2
CMTI(kV/us)
10kV/us
Features
Built-in Flip-Flop
Electronic Component
BM0258831725
Operating Temperature
40℃~+100℃
Operating Voltage
4.5V~20V
Type
DC
Output Current
25mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

TLP2105 (TP,F) 产品概述

一、核心参数与特性

TLP2105 为东芝(TOSHIBA)出品的逻辑输出型光耦合器(双通道,8-SO 封装),面向工业与通信隔离应用,主要参数如下:

  • 输入类型:DC(发光二极管驱动)
  • 工作电压(VCC):4.5V ~ 20V,兼容TTL/CMOS 及更宽电源范围
  • 数据速率:最高约 5 Mbit/s
  • 隔离电压 Vrms:2.5 kV(短时耐压等级)
  • 共模瞬态抗扰度 CMTI:10 kV/μs(高抗干扰能力)
  • 通道数:2(双通道)
  • 工作温度:-40 ℃ ~ +100 ℃
  • 传播延迟 tpLH / tpHL:典型 250 ns / 250 ns(对称延迟,有利于双向时序控制)
  • 输入阈值电流 (IF_H):1.6 mA(保证逻辑切换的 LED 驱动参考)
  • 输出电流:最大 25 mA(可直接驱动小负载或逻辑门)
  • 器件耗散功率 Pd:75 mW
  • LED 正向压降 Vf:典型 1.65 V;直流反向耐压 Vr:5 V;正向允许电流 If:20 mA

二、主要优点与适用场景

  • 宽工作电压(4.5–20V)使其可在 5V、12V、24V 等常见系统中直接使用。
  • 5 Mbit/s 的速率结合 10 kV/μs 的 CMTI,适合要求较高抗扰度的工业总线隔离、现场信号采集与驱动。
  • 双通道 SO-8 封装,有利于节省 PCB 面积并实现差分或独立信号隔离。
  • 25 mA 输出驱动能力可直接驱动下游逻辑或小功率器件,适用于 MCU 接口隔离、继电器驱动前级、光耦中继等。

三、典型应用与电路建议

  • 工业现场 I/O 隔离、传感器信号采集、开关量隔离传输
  • 电源开关控制、PWM 信号隔离、智能模块与隔离通信接口
  • 建议输入驱动器设计:若 MCU 输出 3.3V,希望 LED 导通电流为 2 mA,可按 R = (Vmc u - Vf) / If 计算,例如 R ≈ (3.3V - 1.65V) / 2mA ≈ 825 Ω(取 820 Ω)。
  • 输出侧通常作为开集电极或推挽逻辑输出(请参阅完整数据手册确认具体输出结构),需根据 VCC 和负载计算上拉电阻与功耗。

四、热与隔离注意事项

  • 器件总耗散 75 mW,布局时注意散热,避免多通道同时满负荷工作导致器件过热。
  • 隔离沟槽、足够爬电距离与系统级接地策略对于实现名义 2.5 kVrms 隔离能力至关重要。
  • 在高共模干扰环境下(快速开关电源、变频器等)推荐增加差分屏蔽或滤波措施,以发挥 10 kV/μs 的 CMTI 优势。

五、封装与采购信息

  • 封装:8-pin SO(SO-8),双通道布局,适合自动贴装生产。
  • 型号示例:TLP2105 (TP,F),品牌:TOSHIBA(东芝)。
  • 购买前请以东芝官方数据手册为准,并确认引脚定义、输入/输出极性与最大额定值以满足系统设计需求。

六、使用建议

  • 设计时以 IF_H=1.6 mA 为逻辑切换下限参考,若需要更高噪声裕度建议适当提高 LED 驱动电流但不超过 If=20 mA。
  • 考虑到传播延迟约 250 ns,适用于中高速数字信号隔离,但对亚纳秒级或数十 MHz 的实时链路需选用更高速的器件。
  • 最终应用请验证温度、功耗及 EMC 性能,必要时做系统级抗扰度测试。

免责声明:以上为基于给定参数的概述性设计建议,实际设计请参考 TOSHIBA 官方完整数据手册及应用说明,或与供应商技术支持确认关键电气与可靠性指标。

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