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TMI TMI8110
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TMI TMI8110
- Type
- TMI
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TMI
- Electronic Component
- TMI8110
- Electronic Component
- 1
- Package
- ESOP-8
- Electronic Component
- Brushed DC Motor Driver IC
- Electronic Component
- 0.19g
- Electronic Component
- 1
- Integrated FET
- Electronic Component
- H
- 1
- Features
- Current Sampling
- Electronic Component
- BM0257364265
- Resistor
- 250mΩ
- Current
- 3.5A
- Operating Temperature
- 40℃~+150℃
- Operating Voltage
- 4.5V~37V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
TMI8110 产品概述
一、产品简介
TMI8110 是拓尔微（TMI）推出的一款集成功率场效应管的单通道 H 桥驱动器，封装为 ESOP-8。器件面向驱动小功率直流电机、执行器与感性负载的场合，集成 FET 可简化外部电路设计，适合资源受限与体积敏感的应用。
二、主要参数与特点
- 集成 FET：是（内置高低侧功率 MOSFET，构成一组 H 桥）
- H 桥数量：1
- 峰值电流：3.5 A（瞬态峰值，可用于短时启动或冲击负载）
- 工作电压：4.5 V ~ 37 V，覆盖汽车 12V/24V 与工业 24V 等宽范围
- 导通电阻（Rds(on)）：250 mΩ（典型）
- 静态电流（Iq）：5 μA，适合低功耗待机场合
- 工作温度：-40 ℃ ~ +150 ℃，适应严苛环境
- 封装：ESOP-8，便于 PCB 安装与散热设计
三、应用场景
适用于微型直流电机、步进电机切换驱动、锁定机构、阀门、继电器替代驱动以及便携式与汽车电子中等功率控制场合。低待机电流使其在电池供电设备中更具优势。
四、设计与使用建议
- 功耗与散热：在峰值电流下，单臂导通功耗约为 P ≈ I^2·R ≈ 3.5^2×0.25 ≈ 3.1 W，连续高电流工作时需评估结温并通过铜厚、热 vias 或外部散热片降低结温。合理安排 PCB 散热区、加大 GND 与 VCC 的铜箔面积。
- 电源去耦：在靠近器件的电源引脚处放置低 ESR 电容（如 10 μF 与 0.1 μF 并联），减少瞬态电压跌落与噪声。
- 感性负载保护：尽管 FET 本体具有体二极管，对回流有一定容忍，仍建议为大型感性负载采用合适的续流路径或额外吸收网络（RC 或 TVS），以保护器件免受过压冲击。
- PWM 与死区时间：驱动 PWM 时确保适当死区时间以防止高低侧直通。若需精准电流控制，应在电路中加入电流检测与限流方案。
- 工作模式与保护：在设计中预留过流、过温与欠压检测策略；具体器件内建保护功能请参阅官方数据手册并按手册建议使用。
五、封装与可靠性
ESOP-8 封装利于自动化贴装与热管理。器件工作温度范围宽，适合汽车级与工业级产品，但在长期可靠性设计中要考虑热循环、焊接工艺与散热设计对寿命的影响。
六、总结
TMI8110 以其集成 FET、宽工作电压、低静态电流与适应高温环境的特性，适合对体积、功耗和环境适应性有要求的中等功率驱动场合。为确保长期可靠运行，应重点关注 PCB 散热、电源去耦与感性负载的过压保护，并参考详细数据手册完成最终电路与布局验证。
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