WMSIC Electronic Components

TMI TMI8261

ModelTMI8261
PackageSOP-8
BrandTMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TMI TMI8261
Type
TMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TMI
Electronic Component
TMI8261
Electronic Component
1
Package
SOP-8
Electronic Component
Brushed DC Motor Driver IC
Electronic Component
0.19g
Electronic Component
1
Integrated FET
Electronic Component
H
1
Features
Current Sampling
Electronic Component
BM0228586182
Resistor
63mΩ
Operating Temperature
25℃~+85℃
Operating Voltage
3V~18V
Output Current
5A

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

TMI8261 产品概述

一、产品简介

TMI8261 是拓尔微(TMI)推出的一款集成场效应管(Integrated FET)H 桥驱动芯片,封装为 SOP-8。芯片内部集成一对上下功率 MOSFET,形成单通道 H 桥,适用于中小功率直流电机与执行器的双向驱动。主要电气参数包括:输出峰值电流能力 5A(短时)、工作电压范围 3V~18V、导通电阻 Rds(on) 典型值 63mΩ、静态耗电 Iq≈1μA,工作温度范围为 -25℃~+85℃。

二、主要特性

  • 集成 FET:内部集成高、低侧 MOSFET,外部无需独立功率管,简化 BOM 与 PCB 布局。
  • 宽工作电压:3V~18V 的供电范围,兼容常见电池与车载 12V/24V 降压场景(需注意瞬态)。
  • 低导通电阻:Rds(on) ≈ 63mΩ,有利于降低导通损耗与温升。
  • 低静态电流:待机电流约 1μA,适合对续航敏感的电池供电设备。
  • 封装紧凑:SOP-8 封装,便于中小体积应用的自动贴装生产。

三、典型应用场景

  • 小型直流电机双向驱动(玩具、家电、智能窗帘等)。
  • 线性/旋转执行器、微型泵、振动马达或步进预驱(配合合适控制)。
  • 电动锁、继电器替代驱动、伺服控制中的驱动器单元。
  • 低功耗便携设备中需要双向驱动的场合。

四、典型电气与热设计要点

  • 功耗估算:在满载 5A 连续工况下,单次导通损耗近似为 P = I^2·Rds = 5^2×0.063 ≈ 1.575W,H 桥全通时损耗更高。实际使用多为脉冲或短时驱动,需按占空比修正平均功耗。
  • 散热建议:SOP-8 封装散热能力有限,建议在 PCB 上使用大面积铜箔散热、热过孔过渡到底层,以及限制连续大电流工作时间或额外散热片。
  • 去耦与滤波:电源端建议并联 0.1μF 高频陶瓷与 10μF 以上的电解/钽电容,靠近芯片 Vcc 与 GND 引脚安放,以抑制瞬态电压和减少 EMI。
  • 布局注意:功率回路走线短且宽,低阻抗回流路径;逻辑信号走线远离大电流回路;GND 建议划分为功率地与信号地并在单点相连。

五、典型外部保护与使用建议

  • 推荐在供电侧并联 TVS 或瞬态抑制电路以应对大电机反电动势与瞬态尖峰。
  • 若需限流或精确电流监测,可在 H 桥负载侧串联电流采样电阻并配合外部电流感知电路。
  • 对于长期高电流方案,建议在设计阶段评估热失效边界并增加温度监测或软限流策略。
  • 上电/关断需遵循顺序缓冲,避免在电源瞬变时产生非正常导通。

六、优势概述

TMI8261 在同类小功率 H 桥产品中以低静态电流与集成 FET 的紧凑方案见长,适合对体积与待机功耗敏感的便携或嵌入式设备。宽电压带宽与 5A 的输出能力使其在多种中小功率驱动场景中具有良好的适应性。

如需进一步电气参数、引脚定义或参考电路,请参考厂商完整数据手册或联系拓尔微技术支持以获取原厂资料。

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