WMSIC Electronic Components

UMW SI2309A

ModelSI2309A
PackageSOT-23
BrandUMW
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UMW SI2309A
Type
UMW
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UMW
Electronic Component
SI2309A
Electronic Component
1
Package
SOT-23
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.033g
Electronic Component
1
Electronic Component
BM0226015833
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.25W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SI2309A 产品概述

一、产品简介

SI2309A 是友台半导体(UMW)推出的一款表面贴装 P 沟道功率 MOSFET,额定漏源电压 60V,适用于中低电流、高侧开关与电源管理场合。器件采用 SOT-23 小封装,适合体积受限的便携式与消费类电子设计。

二、主要电气参数

  • 类型:P 沟道 MOSFET(表面贴装)
  • Vdss(漏源耐压):60 V
  • Id(连续漏极电流,Ta):1.25 A
  • Pd(耗散功率,Ta):1.25 W
  • RDS(on):340 mΩ @ |Vgs|=10 V;550 mΩ @ |Vgs|=4.5 V
  • Vgs(th)(阈值电压):|Vgs(th)| ≈ 3 V @ 250 μA
  • Qg(总栅极电荷):5.4 nC @ 10 V
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:SOT-23
  • 品牌/型号:UMW(友台) SI2309A

三、性能特点与使用建议

  • 导通性能:在 |Vgs|=10 V 时 RDS(on)≈340 mΩ,适合要求较低导通损耗的高侧开关;若驱动电压受限(约4.5 V),RDS(on) 仍为 550 mΩ,适用低电流或通断控制场景。
  • 门极驱动:作为 P 沟道器件,需施加负向栅源电压以导通(相对源极)。为获得最低导通阻抗,建议驱动到接近 -10 V(或将栅极拉到系统地电位,根据电源拓扑决定)。
  • 开关损耗:Qg=5.4 nC,在高频开关时需考虑驱动电流与开关损耗,合理选用驱动器或限制切换频率。
  • 热管理:器件在 SOT-23 小封装中 Pd=1.25 W(Ta)受限,PCB 散热(铜面、焊盘和过孔)设计对长期可靠性至关重要。大电流工况下应注意温升和热阻。

四、典型应用场景

  • 便携设备、消费电子的正电源高侧开关与负载断开。
  • 电池管理系统中用于单节或多节电池保护的开/关控制。
  • 电源路径选择、电源反相保护与低速 DC-DC 管理。
  • 其他对体积、成本敏感且电流在数百毫安至1A范围的开关场合。

五、布局与可靠性要点

  • 将源、漏走线最短且加大铜箔面积以降低导通损耗和热阻。
  • 栅极走线宜短且加阻尼以抑制振铃;开关频繁时考虑门极串联电阻与驱动能力。
  • 裸露铜或散热岛连接到器件焊盘以提升散热能力;必要时使用过孔将热量传导至底层铜箔。
  • 操作时注意静电防护与正确的焊接温度曲线,避免器件损伤。

总结:SI2309A 在 60V 电压等级与 SOT-23 封装下提供了适中的导通阻抗与门极电荷,适合中低功率高侧开关与电源管理应用。设计时重点考虑门极驱动电平与 PCB 热处理即可发挥其良好性价比。

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