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UMW BAV70
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UMW BAV70
- Type
- UMW
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UMW
- Electronic Component
- BAV70
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Switch Diode
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0265604669
- Current
- 200mA
- Diode
- 1
- Current(Ir)
- 2.5uA@70V
- (Vf)
- 1.25V@150mA
- Power Dissipation(Pd)
- 225mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BAV70（UMW / 友台半导体）产品概述
一、产品概况
BAV70 是一款小信号、高速整流/开关二极管，UMW（友台半导体）提供的该型号为一对共阴极配置，适用于高频开关、信号整形和低功耗整流等应用。器件定位为小电流、高反向耐压与快速恢复的通用二极管单元。
二、主要电气参数
- 二极管配置：1 对共阴极
- 正向压降（Vf）：1.25 V @ 150 mA
- 直流反向耐压（Vr）：70 V
- 整流电流（Io）：200 mA（额定值，具体应用需结合散热条件）
- 耗散功率（Pd）：225 mW
- 反向电流（Ir）：2.5 μA @ 70 V
- 反向恢复时间（Trr）：6 ns
- 非重复峰值浪涌电流（Ifsm）：2 A
三、性能特点与解析
- 高耐压、低漏电：70 V 的反向耐压与 2.5 μA 的漏电流使其适合在中高压侧进行小信号隔离或防反接保护。
- 快速恢复：6 ns 的反向恢复时间保证在高频开关或脉冲电路中有较低的开关损耗与少量反向恢复干扰。
- 小功耗限制：器件功耗限值为 225 mW，按 Vf×I 计算，150 mA 条件下损耗约 187.5 mW（安全）；但在 200 mA 条件下损耗约 250 mW，已超出 Pd 标称值，长期连续工作需注意热耗散与降额使用。
- 抗冲击能力：2 A 的峰值冲击电流适用于短时浪涌，但不宜作为长期大电流使用。
四、典型应用场景
- 高速逻辑开关、门电路与电平整形；
- 高频检波与小信号整流；
- 多路信号隔离、共阴极逻辑 OR/ steering 应用；
- 过压/反接保护与浪涌吸收的辅助元件；
- 通信前端或混频电路中的快速钳位。
五、选型与使用建议
- 散热与降额：若电路需长期接近 200 mA，请采用更大功耗器件或在PCB层次提供良好散热路径，并对工作电流适当降额（例如≤150 mA 连续工作）。
- 余量设计：在反向耐压与漏电需求上保留一定裕量，避免长期在 Vr 极限运行以降低漏电和击穿风险。
- 开关速率：当用于高频开关时，配合合适阻尼或RC吸收以抑制因反向恢复引起的振铃。
- 验证封装：不同封装的热阻与最高额定电流差异较大，选型前请参考 UMW 官方数据手册与推荐封装。
六、封装与可靠性提示
UMW 的 BAV70 常见于小型 SMD 封装，具体标识与引脚定义请以官方资料为准。元件在回流焊可靠性、潮湿敏感度方面应按厂商建议处理与储存。
七、总结
UMW 的 BAV70 以 70 V 耐压、快速恢复（6 ns）和低漏电为主要卖点，适合小信号高速开关与中等电流的整流保护场合。设计时需重视 Pd 与实际工作电流的匹配，合理降额与优化散热可保证长期可靠性。选型前建议参考 UMW 官方完整数据手册以获取封装、温度特性与典型波形等详细参数。
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