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VBsemi AOI444-VB AOI444
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VBsemi AOI444-VB
- Type
- VBSEMI
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VBSEMI
- Electronic Component
- AOI444-VB
- Electronic Component
- 1
- Package
- TO251
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.8g
- Electronic Component
- 1
- Electronic Component
- BM0264600203
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 59.5W
- Gate Voltage(Vgs)
- ±20V
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AOI444-VB 产品概述
一、主要参数
- 型号：AOI444-VB（VBsemi 微碧半导体）
- 类型：单通道 N 沟道 MOSFET（Trench 工艺）
- 漏源电压 Vdss：60 V
- 连续漏极电流 Id：35 A
- 导通电阻 RDS(on)：32 mΩ @ VGS = 10 V
- 阈值电压 VGS(th)：约 2 ～ 3.5 V（典型值接近 3.5 V）
- 栅极电荷 Qg：28 nC @ 4.5 V
- 输入电容 Ciss：1.1 nF；输出电容 Coss：281 pF；反向传输电容 Crss：130 pF
- 功耗 Pd：59.5 W（器件极限值，实际散热依赖封装与环境）
- 工作温度范围：-55 ℃ ～ +150 ℃
- 允许栅极电压：±20 V
- 封装：TO251（长电科技封装；台积电流片）
二、性能亮点
- Trench 制程带来较低的导通电阻与良好的电流承载能力，在 60 V 级别中兼顾开关与导通损耗。
- 32 mΩ（10 V 驱动）适合中大功率开关应用，35 A 连续电流能力满足多数电源与电机驱动场景。
- 比较低的 Ciss 与适中的 Qg（28 nC）在开关速度与驱动功耗之间取得平衡，有利于降低栅极驱动能耗同时控制开关损耗。
三、封装与热特性
- TO251 封装适用于中功率模块和散热条件可控的 PCB 设计。Pd 标称 59.5 W，但实际允许功耗受 PCB 铜箔面积、散热片及环境温度影响，设计时应参考热阻并保留足够散热裕量。
- 工作温度覆盖工业级范围，适合工业控制与电源管理等长期运行场景。
四、典型应用场景
- 开关电源（DC-DC 转换器、同步整流）
- 电机驱动模块（直流电机驱动、无刷电机驱动前级）
- 工业控制模块与功率管理（逆变器前端、负载开关）
- 汽车电子低压部分与电源分配（需遵守车规级要求时进行额外验证）
五、设计与使用建议
- 驱动电压建议采用 10 V 级驱动以获得标称 RDS(on)；若采用逻辑电平驱动需验证导通损耗与温升。
- 栅极驱动器需能够提供足够电流以快速充放 Qg（28 nC），并考虑驱动器功耗及死区时间优化以减少交越损耗。
- 布局上优化漏极铜箔与散热路径，靠近器件引脚设置大面积散热铜箔或加装散热片；对高电流回路做好过流路径的宽化。
- 注意 Crss 对开关振铃与二次损耗的影响，必要时配合 RC 缓冲或谐振抑制网络。
六、选型要点与对比
- 在 60 V、30–40 A 级别中，AOI444-VB 以 32 mΩ 的 RDS(on) 与中等 Qg 展现出平衡的开关与导通表现。对比更低 RDS(on) 器件需在栅极驱动能力和成本之间权衡；对比更低 Qg 器件则可减小驱动功耗但可能牺牲导通性能或成本。
七、结论
AOI444-VB 适合需要 60 V 电压耐受、较高导通电流和均衡开关性能的中功率应用场景。合理的驱动设计与散热措施可以发挥其在电源模块、电机驱动与工业控制等领域的优势。
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