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VBsemi VB1240
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VBsemi VB1240
- Type
- VBSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VBSEMI
- Electronic Component
- VB1240
- Electronic Component
- 1
- Package
- SOT-23(TO-236)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0227213062
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.25W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
VB1240 产品概述
一、产品简介
VB1240 是 VBsemi（微碧半导体）推出的一款低压大电流 N 沟道场效应管，专为便携电源、负载开关和功率管理场景设计。器件耐压 20V，连续漏极电流可达 6A，组合小封装与低导通电阻，兼顾体积、散热与开关损耗，适合对效率与空间有较高要求的消费电子与工业控制应用。
二、主要性能指标
- 类型：N 沟道 MOSFET
- 耐压（Vdss）：20V
- 连续漏极电流（Id）：6A
- 导通电阻（RDS(on)）：22 mΩ @ Vgs = 4.5V
- 阈值电压（Vgs(th)）：1V @ Id = 250 μA
- 总栅极电荷（Qg）：8.8 nC @ Vgs = 4.5V
- 输出电容（Coss）：105 pF
- 输入电容（Ciss）：865 pF
- 反向传输电容（Crss/Crss）：55 pF
- 功率耗散（Pd）：1.25 W（在规定环境下）
- 工作温度范围：-55 ℃ ～ +150 ℃
- 封装：SOT-23 (TO-236)
以上参数在常规测量条件下给出，实际设计应参考器件完整数据手册与电路环境。
三、核心优势
- 低导通电阻带来更小的导通损耗，适合高效率开关与功率分配场合。
- 适中的栅极电荷和输入电容在驱动功率与开关速度间取得平衡，便于使用单片驱动或 MCU 直驱（在 Vgs = 4.5V 条件下）。
- 宽温度范围和稳定的热特性提升可靠性，适用于工业级和汽车外部环境（视系统级认证而定）。
四、典型应用场景
- 同步整流与降压转换器（小功率点对点）
- 便携设备的电源开关与电池保护电路
- 负载开关、背靠背保护与电流切换模块
- 马达驱动的小功率阶段、LED 驱动与功率分配网络
五、封装与热设计建议
SOT-23 小封装便于高密度布局，但热阻相对较高。建议在 PCB 设计时：
- 将器件的漏极焊盘与大面积铜箔连接，以利散热；
- 使用热过孔连通多层板内层散热层；
- 考虑并联多个器件或选用更大封装以降低结温，在连续大电流场景下注意功耗与结温计算，确保不超过 Pd 与最大结温。
六、使用建议与兼容性
- 在需要最低 RDS(on) 的应用中，保证栅极驱动电压接近 4.5V 或更高（但不能超过器件最大 Vgs）。
- 关注开关瞬态时的 Crss 与 Qg 对驱动电流和 EMI 的影响，可通过软启动、RC 缓冲或驱动阻尼降低应力。
- 在高频开关应用中，综合考虑 Ciss 与 Qg 对驱动器选型与功耗预算的影响。
如需用于特定系统，请提供工作点和拓扑，便于进行更精确的热设计与电气匹配建议。
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